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" The physical and electrical effects of metal-fill patterning practices for oxide chemical-mechanical polishing processes," IEEE Transactions on Electron Devices, vol. "
Design for Manufacturability and Statistical Design: A Constructive Approach - 305. lappuse
autors: Michael Orshansky, Sani Nassif, Duane Boning - 2007 - 316 lapas
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Handbook of Semiconductor Manufacturing Technology

Yoshio Nishi, Robert Doering - 2000 - 1186 lapas
...CMP-MIC, Santa Clara, CA, 1999, pp 367-374. 127. B Siine, D Boning, J Chung, L Caminetti, F Kruppa, E Equi, W Loh, S Prasad, M Muthukrishnan, D Towery,...polishing processes, IEEE Transactions on Electron Devices 45:665-679, 1998. 128. L Camilletti. Implementation of CMP-based design rules and patterning practices....
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CMOS Electronics: How It Works, How It Fails

Jaume Segura, Charles F. Hawkins - 2004 - 370 lapas
...study." in IEEE International Test Conference (1TC). pp. 479—489. October 1995. 54. B. Stine. et. aL "The physical and electrical effects of metal-fill...patterning practices for oxide chemical-mechanical polisbing processes." IEEE Transactions on Electron Devices. 45. 3. 665-679. March 1998. 55. J. Suehle....
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Design for Manufacturability and Yield for Nano-Scale CMOS

Charles Chiang, Jamil Kawa - 2007 - 255 lapas
...International Symposium on Quality Electronic Design, 2005, pp. 258 - 263. [91] B. Stine and et al., "The physical and electrical effects of metal-fill...for oxide chemical-mechanical polishing processes," in Proc. of IEEE Electron Devices Meeting, Mar. 1998, vol. 45, pp. 665-679. [92] AB Kahng, G. Robins,...
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