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" Experimental Study of Threshold Voltage Fluctuation Due to Statistical Variation of Channel Dopant Number in MOSFET's, "
Design for Manufacturability and Statistical Design: A Constructive Approach - 292. lappuse
autors: Michael Orshansky, Sani Nassif, Duane Boning - 2007 - 316 lapas
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Handbook of Semiconductor Manufacturing Technology

Yoshio Nishi, Robert Doering - 2000 - 1186 lapas
...chemical vapor deposition reactor. J Electrochem Soc, 142: 285, 1995. 29. T Mizuno, J Okamua, A Toriemi. Experimental study of threshold voltage fluctuation...statistical variation of channel dopant number in MOSFETs. IEEE Trans on ED, 41: 2216, 1994. 30. PA Stolk, DBM Klassen. The effect ofstatistical dopant...
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Simulation of Semiconductor Processes and Devices 2001: Sispad 2001

Dimitris Tsoukalas - 2001 - 478 lapas
...for Semiconductors, SIA, 1999 Edition [2] PA Packan, Pushing the limits, Science 1999; 285:2079 [3] T. Mizuno, J. Okamura and A. Toriumi, Experimental...variation of channel dopant number in MOSFET's, IEEE Trans. Electron Devices 1994; 41:2216 [4] HS Momose, M. Ono, T. Yoshitomi, T. Ohguro, S. Nakamura,...
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Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a ...

Bernhard Wicht - 2003 - 184 lapas
...Circuits, vol. 36, no. 4, pp. 658-665, Apr. 2001. 76. Tomohisa Mizuno, Jun-ichi Okamura, and Akira Toriumi, "Experimental Study of Threshold Voltage...Variation of Channel Dopant Number in MOSFET's," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 2216-2221, Nov. 1994. Stochastic Dopand and Interconnect...
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Low-Power Low-Voltage Sigma-Delta Modulators in Nanometer CMOS

Libin Yao, Michiel Steyaert, Willy M. C. Sansen - 2006 - 194 lapas
...IEEE Journal of Solid-State Circuits, 22:921 - 929, December 1987. [Miz94] T. Mizuno, J. Okumtura, and A. Toriumi, "Experimental study of threshold voltage...statistical variation of channel dopant number in MOSFETs", IEEE Transactions on Electron Devices, 41:2216-2221, November 1994. [Moo65] GE Moore, "Cramming...
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Analog Circuit Design: RF Circuits: Wide band, Front-Ends, DAC's, Design ...

Michiel Steyaert, Arthur van Roermund, Johan Huijsing - 2006 - 434 lapas
...Transistors", IEEE J. of Solid-State Circ., vol 24, no. 5, pp. 1433-1439, Oct. 1989. [25] T. Mizuno et al., "Experimental Study of Threshold Voltage Fluctuation...Variation of Channel Dopant Number in MOSFET's", IEEE Trans, on Elec. Dev. vol. 41, no. 11, pp. 2216-2221, Nov. 1994. [26] T. Ohguro et al., "0. 1 8 urn...
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Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007

Tibor Grasser, Siegfried Selberherr - 2007 - 472 lapas
...vol. 53. no, 12. pp. 3063-3069. 2006, [2] http://www.selete.cc,jp/?lang=EN, Unpublished. [3] T. Mizuno and A. Toriumi, "Experimental Study of Threshold Voltage...Variation of Channel Dopant Number in MOSFET's", IEEE Trans. Electron Devices, vol. 41, no. 1 1, pp. 2216-2221, 1994. 96 TOU Em y Oxide ^ * ' \ \ I White...
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Nanoscaled Semiconductor-on-Insulator Structures and Devices

S. Hall, A.N. Nazarov, V.S. Lysenko - 2007 - 377 lapas
...MOSFETs-limitation of 0.1 |am ULSIs, in: Symposium on VLSI Technology (1994), pp. 13-14. 4. T. Mizuno, J. Okumtura, and A. Toriumi, Experimental study of threshold voltage...variation of channel dopant number in MOSFET's, IEEE Transactions on Electron Devices 41(11), 2216-2221 (1994). 5. A. Asenov, Random dopant induced threshold...
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MOSFET Modeling for Circuit Analysis and Design

Carlos Galup-Montoro, M rcio Cherem Schneider - 2007 - 445 lapas
...Andreas G. Andreou, IEEE Press, Piscataway, NJ, 1999. [18] Tomohisa Mizuno, Jun-ichi Okamura, and Akira Toriumi, "Experimental study of threshold voltage...variation of channel dopant number in MOSFET's," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 2216-2221, Nov. 1994. [19] Kwok K. Hung, Ping K. Ko,...
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Silicon-on-insulator Technology and Devices 13

George K. Celler, Sorin Cristoloveanu - 2007 - 409 lapas
..."Extremely Scaled Silicon NanoCMOS Devices", Proc. IEEE 91, pp. 1860-1873 (2003). 8. T. Mizuno, J.Okamura, A. Toriumi, "Experimental Study of Threshold Voltage...Variation of Channel Dopant Number in MOSFET's", IEEE Trans El. Dev. 41, pp. 2216-2221 (1994). 9. HR Khan, D. Vasileska and SS Ahmed, "Modeling of FinFET:...
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