students, and mostly, if not all, majoring in science or engineering disciplines, which is consistent with the mission of the Institute. In addition, there are research institutes associated with other ministries, such as the 50 research institutes of the Ministry of Machinery and Electronic Industry. From the educational perspective, they operate similarly to institutes of Academia Sinica but often maintain a more near term engineering orientation, including either in-house production facilities or close cooperation with production facilities. Among the institutes of the Ministry of Machinery and Electronic Industry is the Beijing Vacuum Electronics Research Institute (BVERI), which is reviewed below. For Many additional educational institutions are administered by provincial and city governments. example, in Hefei, home of USTC, 19 other universities and colleges are sponsored by Anhui Province. Some of these universities are large, up to 100,000 students. Most teachers and many engineers are trained in these institutions. Medical education, for example, is not obtained from national universities. Instead, medical education is obtained from special medical schools operated by provincial or city governments. No regular university education is required for entry, and instruction of medical personnel in the sciences is the responsibility of the medical school instruction staff. People with only four years of education beyond secondary school are graduated and employed in hospitals and clinics as full medical-staff members. Fully trained physicians with training obtained overseas are rare in Chinese medical facilities, where traditional Chinese folk medical practices are still respected and practiced in major hospitals as well as in local medical clinics. Although medical service is free or nearly free for Chinese citizens, medical service for western tourists may cost whatever price seems reasonable to the provider. It may be as little as the cost of the X-ray film for an X ray, or as much as the provider's impression of what it would cost the tourist in his homeland. PEKING UNIVERSITY, BEIJING Two of China's most prestigious universities are located adjacent to each other in northwest Beijing: Peking University (which never changed its name from the old British name to the modern Chinese name of the capitol city) and Tsinghua University, which is discussed below. The Institute of Microelectronics is hosted in the University by the Department of Computer Science and Technology in close cooperation with the Department of Physics. One of the main teaching facilities is the prototype production facility for semiconductor electronics (silicon technology). This facility is housed in a class 1000 clean area and includes facilities for handling two-inch or three-inch wafers. Although simple masks can be produced on site, more complex designs are sent to a mask shop in Shanghai, with a turn-around time of about one week. Mask designs are produced by students or researchers on PC-type computers or workstations, and they may be tested by building prototype ICs for in-house testing. Contacts at the Peking University Institute of Electronics are: Wang Yang-Yuan, Professor, Wu Guoying, Professor, Vice Zhang Guo-Bing, Associate Fax: +86-1-256-4095 Institute of Microelectronics, Beijing, 100871, P.R. China. Zhang Bei, Associate Professor. Phone: +86-1-256-1166 ext 3755 Department of Physics, Peking University, Beijing, 100871, P. R. China TSINGHUA UNIVERSITY, Institute of Microelectronics at Tsinghua consists of 10 professors, 35 associate professors, 25 lecturers, and other assistants, technicians, and secretaries for a total of 137 persons. The student body consists of 183 undergraduate students, 27 M.S. students (10 per year are accepted), 18 Ph.D. candidates (5 per year are accepted), and one postdoctorate (from another university, on a twoyear limited appointment). Over the past three calendar years, they have awarded eleven Ph.D. degrees, and 38 M.S. degrees. As at the Peking University, Tsinghua University also has a 3 to 4um prototype semiconductor-production facility for teaching use. However, in 1989 Tsinghua installed a lum prototype production facility as well, which is reserved for faculty research and collaborative developments with industries and other laboratories. Within the Institute of Microelectronics, the research programs are divided among five divisions: This Division is headed by Professor Yue Zhenwu, has programs directed toward development of a 1 Mbit Chinese-character ROM, the first ULSI in China, with more than a million transistors. Other programs include the architecture analysis of the RISC SPARC 32-bit CPU, an asynchronous communications interface 8250 and direct-memory access (DMA) controller 8237; the 8086/8088 CPU have been put into production by Shanghai Bellin Company. A research-level programmable transistor neural network suitable for integrated circuit use is under study, and a buried twin-well epitaxial structure bi-complementary metal oxide semiconductor (bi-CMOS) technology has been improved. IC Technology Research Division This Division, headed by Professor Li Ruwei, conducts research programs in VLSI process development and optimization, submicron VLSI technology research, shortchannel device physics, process control monitoring, and CAM system development. Their fabrication line is producing 1 to 2μ normal metal oxide semiconductor (NMOS) and CMOS wafers, 3-in. diameter (soon to be increased to 4-in. size) as a small foundry for outside collabora tors and customers, as well as for internal research programs. The facility includes 100 m2 of class 10 clean space and 600 m2 of class 1000 clean space in which a complete processing facility is located. Research and Development Division of Microelectronic Technique This Division is headed by Professor Zhang Jian-ren. It emphasizes development of application-specific integrated circuits (ASIC) and chippackaging development. Recent ASICS included tow for communications and the 1 Mb ROM referred to above. IC CAE Research Division This Division is headed by Professor Gu Zuyi. It works on research programs in software development metal-layer CMOS gate arrays, for CAM of ICs, design of dualCMOS gate arrays with 10,000 equivalent gates, amorphous Si-hydrogen thin-film transistors, capacitance-voltage testing instrumentation, and statistical optimum design of VLSICS. Contacts at the Tsinghua Institute of Microelectronics are: Li Zhijian, Director, Professor, Chen Hongyi, Vice Director, Zhang Jisheng, Vice Director, UNIVERSITY OF SCIENCE AND As the only university of China established by the Academia Sinica (1958), USTC was moved from Beijing to Hefei in 1970. Currently under the leadership of President Gu Chaohao, its student body numbers about 5,000, of whom about 800 are M.S. students and 200 are Ph.D. students. They are recruited from many parts of China to study in an academically democratic atmosphere. The University offers special classes for the gifted young and boasts students as young as eleven years of age. The average age of new students is only 17 years. The University has two campuses not far apart in Hefei, which is a small city of 800,000 inhabitants and the historical provincial capital of Anhui Province. In addition, there is a USTC graduate school in Beijing. USTC warmly welcomes and strongly encourages international academic collaborations and exchanges. During my short visit, I met visiting scholars from Japan and from Australia. USTC currently lists 14 foreign institutions with whom they have currently active agreements. Eight of these are U.S. institutions. They also list 31 foreign honorary professors, of whom 21 are U.S. citi zens. Among the 21 departments, centers, divisions, and laboratories of the university, the largest department is the mathematics department. There are three physics departments, an earth and space sciences department, a computer science and technology department, two chemistry departments, and the Hefei National Synchrotron-Radiation Laboratory (HESYRL). The three departments of physics are differentiated according to their specialization. The department of physics specializes in semiconductor physics, superlattices, quantum confinement effects, solid-state and low-temperature physics, and high-temperature superconductivity. The department of modern physics specializes in particle physics, gravita tion, plasma physics, nuclear physics and technology, and atomic physics. The center for fundamental physics specializes in cosmology, relativistic astrophysics, quantum field theory, metal-semiconductor interface physics, solid-state applications of the Mossbauer effect, and microanalysis. Some of the laboratory facilities I saw were: • A Vacuum-Generators XPS-LEED-AES-profiling on oxidation, were being • A SPEX Raman spectrom- • A Nicholet FTIR appara- • Three-target magnetron- Other apparatus discussed with me included a molecular-beam epitaxi (MBE) system devoted to growth of AlGaAs epilayers on GaAs, and CVD systems devoted to deposition of thin-film diamond films on Si, as well as Mo-Si multilayer mirrors for application in soft X-ray synchrotron radiation. In the latter case I saw a small mirror comprising 50 layer pairs with a peak reflectivity at a wavelength of 6 nm. In X-ray dif- X-ray energy-dispersive spectroscopy: fraction using a graphite crystal, angular resolution of 0.01° has been achieved. Contacts at the University are: High-temperature superconductivity: Chen Zhaojia, Professor, Department of Physics. Quantum and nonlinear optics: Guo Guangcan, Professor, Solid-state and interface physics: Fang Rongchuan, Professor, Semiconductor and superlattice physics: Ren Shengyuan, Professor, Solid-state and low-temperature theory: Wu Hang Sheng, Professor, Department of Physics. Quantum theory of solids: Zhang Youngde, Professor, Mossbauer applications in solid physics: Wu Yonhua, Professor, Center for Fundamental Physics. Wu Ziqin, Professor, Center for Telephone: +86-551-331134 Hefei Synchrotron-Radiation Research Laboratory (HESYRL) This laboratory is located in the smaller, newer west campus of USTC. The synchrotron radiation is provided by a dedicated 800 MeV storage ring that is injected from a 200 MeV linear electron accelerator. The storage ring is housed in a modern, circular-domed building with ample space for beamlines and experimental equipment. After seven years in construction and commissioning, HESYRL became fully operational in 1992. Storage of up to 327 mA of beam current has already been achieved, thus exceeding the design goal of 300 mA. At present, there are five beam lines, operational or nearly operational on the storage ring, all from bending-magnet source points. Future expansion will allow up to 24 bending-magnet beam lines and three insertion-device beam lines. Currently, the five beam lines are used as follows: Beam line U1 uses a whitebeam station devoted to submicron lithography, surface sonic-wave device fabrication, and millimeter/ microwave device lithography. Beam line U10 uses a 1-m SeyaNamioka monochromator to provide vacuum-ultraviolet radiation for the study of free surfaces and interfaces of semiconductors and crystals, as well as surfaces of noncrystals and organic semiconducting materials. Beam line U10B also uses a 1-m Seya-Namioka monochromator to provide vacuum-ultraviolet radiation for active biological and medical research in the processes of growth, aging, and cancerous mutation. Beam line U12A uses a zone plate monochromator for the study of fluorescence lifetimes in noncrystals and in laser materials, as well as for low-temperature fluorescencelifetime research on proteins and energy transitions in rare earth materials. This unusual monochromator is tunable in the wavelength range to 5.4 nm, and achieves a resolving power of 200. However, the acceptance angle is severely limited, and the flux throughput is low. X-ray images magnified up to 1850x are routinely obtained. 2 Beam line U20 uses a copy of the famous Dragon monochromator at the National Synchrotron Light Source, Brookhaven, NY. This state-of-the-art instrument will use four diffraction gratings to provide radiation over the wavelength range 1.2 to 120 nm with a resolving power of 1000, and medium flux throughput. However, the four holographic, SiC gratings are two years overdue from the English supplier. Hence, two temporary gratings have been made locally so that some preliminary experiments may be started, albeit with much lower resolving power. Research on the U20A beamline will be devoted to atomic and molec ular absorption spectroscopy, photoionization spectroscopy, chemical reactions between molecules with highly excited orbital electrons, and molecule-ion reactions. Although nanosecond time-resolved experiments are planned, single-bunch running of the storage ring, as needed for these experiments, has not yet been achieved. HESYRL is a national research institute that is open to and shared by researchers from all over China. Users from abroad are welcome, and interests in building user-owned beamlines or experiment stations will be favorably considered. Contacts at the Laboratory are: Bao Zhoungmou, Professor, Director Office, HESYRL. Fang Rongchuan, Professor, University of Science and 96 Jinzhai Road FUDAN UNIVERSITY, SHANGHAI The Surface Physics Laboratory of Fudan University that shares the title of "State Key Laboratory" with the Laboratory for Surface Physics Institute of the Academia Sinica in Beijing, was founded by Professor Xie Xide, who is now partially retired, but still leads the theoretical group. Ms. Xie is one of the most prominent solid-state physicists in China, and is well known worldwide. Currently the Surface Physics Laboratory is ably lead by WANG Xun, an experimentalist with a strong interest in epitaxial growth of semiconductors. Three major thrust areas are identified at the Surface Physics Laboratory: Vacuum generators ADES 400 two-chamber angle-resolved electron spectrometer. Vacuum-Generators Escalab-5 multifunction elec tron spectrometer. Riber Model SSC electronbeam evaporator. LEED-AES system with Arion sputter profiling capability. Another LEED-AES system with inverse photoemission and total current spectrometer capabilities. Photoacoustic spectrometer with CO2 and HeNe lasers, and ZnSe vacuum window. Scanning tunnelling microscope in ambient air. Hot-wall epitaxial deposition system. These major instruments support a very active research program in surface physics. Professor Wang Xun has a strong interest in Si-Ge superlattices. There are two Riber MBE systems and two older domestic MBES for sample preparation. RHEED-oscillation control is used in the epitaxial growth of Si-Ge superlattices that include thin, two-cycle growths. However, photoluminescence (PL) characterization is currently not available in China for Si-Ge superlattices. Wang plans to establish a new PL capability that will be installed on an existing Raman system, to search for the elusive free exciton in Si-Ge superlattices. Much of the characterization of samples grown in Wang's laboratory is done at the Peking University, or elsewhere in China. The Surface Physics Laboratory conducts device research oriented toward infrared detectors and heterojunction bipolar transistors. However, at present the Surface Physics Laboratory has no capability for processing epitaxially prepared wafers into useful devices. In the Applied Surface Physics Laboratory, studies of passivation of III-V semiconductor surfaces through electrochemical processes are underway. Thick sulphur layers are prepared, as opposed to the submonolayer sulphur passivation interlayer reported by NTT in Japan. Wang's experience indicates that the submonolayer sulphur interlayer is not sufficiently stable. Porous silicon is an active research topic in the Applied Surface Physics Laboratory, as well. Electroluminescence has been observed, along with nonlinear optical properties. Quantum confinement may play a role in the electroluminescence, and a three-photon process is being considered as a possible mechanism for the nonlinear optical behavior. The third-order susceptibility coefficient ≈(3) has been measured, and infrared up-conversion has been observed. The theoretical group headed by Professors Xie Xide and Zhang Kaiming have been interested in lattice dynamical calculations. Applications to b-SiC(111) have been reported recently. It has been pre dicted that Fermi-surface pinning at a Au-coated surface will be caused on the Si-terminated surface by an intrinsic surface state in the gap. On the C-terminated surface, however, that surface state lies near the top of the valence band. Adsorption of Al on the b-SiC(100) surface shows quite different properties. Al adsorption hardly affects the Si-C bond in the Si-terminated (100) surfaces, while appreciably weakening the Si-C bond on C-terminated (100) surfaces. In recent studies of strained Si, Ge, Si/GaAs and Ge/GaAs interface systems. Contacts at the Surface Physics Laboratory of Fudan University are: Xie Xide, Professor. Fax: +86-21-549-1875 Microelectronics Institute of Fudan University is ably and energetically directed by Professor Ruan Gang of the Electrical Engineering Department. Research at the Institute is directed mainly toward the study of silicides of Ta and Co, solidstate interactions in CoSi2, silicide layers on Si-Ge materials, and porous silicon for SOI applications. The Institute collaborates closely with neighboring industries. With 14 million people, Shanghai is the major industrial center of China, and probably the second major cultural and educational center after Beijing. Prototype devices are made with 4μm line widths. Processing techniques used include mask aligning, sputter etching, plasma etching optical lithography, diffusion and annealing furnaces for 2- and 3-in. Si wafers, and ion implantation for P or Al (200 KeV). Mask designs are recorded on magnetic tape and sent to the Shanghai Mask Center. One large deposition system includes three different sputter-deposition techniques, a) electron-beam sputtering, b) ion-beam sputtering, or c) radio frequency plasma discharge sputtering from any of six different targets. In characterization their facilities are weak. They rely on scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy, however they have no photoluminescence (PL). The emphasis on CoSi2 is in recognition of the close lattice match with Si (about 2% mismatch), which makes epitaxial contacts conceivable. It is generally agreed that epitaxial contacts will show better stability, lower contact resistance, and lower contact noise (1/f noise) than alloyed contacts. Results of recent research on CoSi/Si contact formation at the Fudan University has shown that epitaxial contacts may be realized through solid-state reaction of thin bilayers (≈ 10 nm) of Co/Ti on either (100) or (111) Si substrates. Bilayers of Co/Ti were deposited by ion-beam sputtering, and thermally annealed in a multistep process by using a halogen lamp in a nitrogen ambient. Results show that the Ti is displaced to the surface, and an epitaxial CoSi2 contact layer is formed. TEM cross-sectional micrographs show a very sharp and uniform CoSi/Si interface. Theoretical work at the Institute is directed by Prof. Tang Ting-ao. Considerable effort is directed toward modelling devices that include new and proposed devices using Si-Ge materials. |