4. Molecular beam epitaxy, heterostructures, silicon superlattices, and silicon bandgap engineering.

5. Empty surface states of metals and semiconductors studied by inverse photoemission.

6. Coadsorption study of atoms and molecules on metals and their oxides.

7. New methods used in surface analysis and associated fundamental physics.

For example, some recent theoretical research activities at SPL have addressed the growth properties and phonon spectra of a-Sn/Ge superlattices, geometric and electronic properties of a B-SiC(100) surface; electronic structure of II-VI compounds; alkali metal chemisorption on a GaAs(110) surface; chemisorption of H on a diamond (001) surface; adsorption of alkali metals on a Si(111) surface; electronic structure of Si(111)-surface-adsorbed Al or Sn; effects of surface barrier thickness on electronic states in quantum wells; structure of very thin metal films; and energy band structure of a twodimensional (2D) lattice of circular quantum dots. Other recent research at SPL is focused on molecular beam epitaxy growth and characterization of Ge Si/Si strained layer superlattice systems (including temperature dependence of critical thickness for 2D growth, rapid thermal annealing studies, highresolution electron microscopy (HREM) studies, Raman spectra studies, Rutherford backscattering, electron diffraction studies, x-ray diffraction studies, and transmission electron microscopy). Moreover, attention has also been given to: SOI (silicon on insulator) systems, boron doping in Si molecular beam epitaxy by coevaporation of B203, total-current spectroscopy of surface electronic states on Si(100), hot-wall-epitaxy growth of ZnSe and Zn, Mn Se films on GaAs

1-x X

g. Scanning tunneling microscope in air.

h. Hot-wall-epitaxy system.

There are four major research groups at SPL, including a theory group, a molecular beam epitaxy group, a photoemission group, and a new-surfacetechnique group. (There is also a technician-engineering group.) In all, there are 5 professors, 9 associate professors, 1 senior engineer, and about 7 lecturers, totaling about 22 senior researchers. They also have 5 technicians and about 25 graduate students and several administrators. Further information may be obtained from:

Director Xun Wang

Surface Physics Laboratory
Modern Physics Institute
Fudan University
Shanghai 200433, China
Tel: 86-21-5484906 x2683
Fax: 86-21-3269848

ION BEAM LABORATORY
(IBL), SHANGHAI INSTITUTE
OF METALLURGY, ACADEMIA
SINICA, SHANGHAI

The Ion Beam Laboratory of the Shanghai Institute of Metallurgy addresses the study of interactions of ion beams with solids, as well as ion beam synthesis and modification of materials, micromachining, surface analysis, and other fundamental and applied research. Its importance is partly based on the extensive use of ion implantation in silicon for the production of semiconductor devices and integrated circuits in China (and elsewhere). Current research activity includes low energy ion implantation for the formation of shallow junctions and high energy ion implantation and SOI technology. Applications in telecommunications, transportation, medicine, etc. employ Si-implanted GaAs dual-gate metal semiconductor field effector transistors

(MESFETs), GaAs Hall effect sensors, as well as HgCdTe infrared detectors, light-emitting diodes, and laser devices fabricated by ion implantation. Ion implantation research in metals is also important for improving wear, corrosion, oxidation, and fatigue resistance properties. Reactive ion beam coating has been instrumental in producing thin films of high-T superconductors (Y, Ba, Cu,O,), etc. fon beam enhanced deposition has been employed to synthesize compound films (Si,N;TiN), and the process has been analyzed by a dynamic ion implantation model and a Monte Carlo simulation.

In playing a leading role in engaging such studies and applications in China, the Ion Beam Laboratory has recently focused on research programs as follows:

1. Physical processes of ion beam-solid surface interactions.

2. Ion beam implantation in elemental and compound semiconductors.

3. Surface modification of metal and alloy surfaces by ion beams.

4. Surface modification of ceramic surfaces, composite materials, superconductive materials, and diamonds.

5. Ion beam assisted thin film techniques.

6. Ion beam synthesis of SOI materials and devices.

7. Rapid annealing, laser irradiation of semiconductors.

8. Research and application of surface analysis by ion beams.

9. Physics and application of ion beam sputtering.

Arepresentative list of recent research titles of the Ion Beam Laboratory is given in Appendix C.

Semiconductors (ICPS-21) to be held in Beijing (10-14 August 1992). This will be a forum of major importance for the presentation of recent research developments in semiconductor physics from China and from the world. The satellite Sixth International Conference on Superlattices, Microstructures, and Microdevices (ICSMM-6) to be chaired by Prof. H.Z. Zheng at Xi'an, China (4-7 August 1992), will also be important to watch for new developments. Information about these conferences may be obtained as follows:

As one of China's first open laboratories of the Academia Sinica, IBL accepts foreign visitors as well as Chinese scientists to participate in research within the areas described here, subject to the approval of the program committee of the laboratory. Such arrangements usually last 1 to 2 years and typically involve two to four researchers. At least part of the work should be carried out at the Ion Beam Laboratory, and there is limited funding available, restricted to expenses for ICPS-21 materials, machining, computation, measurements, and analysis. Further information relating to application for participation may be obtained from:

Prof. Xun Wang Secretary ICPS-21 Physics Department Fudan University Shanghai 200433, China Fax: 86-21-326-9843

Prof. Xide Xie Chairperson, ICPS-21 Fudan University Shanghai 200433, China Telex: 33317 HUAFU CN Fax: 86-21-326-9843

Prof. D.S. Jiang

Secretary ICSMM-6

Institute of Semiconductors, CAS P.O. Box 912

One can hardly touch upon the subject of semiconductor physics in China without mention of Kun Huang. His important role in developing semiconductor research in China is amply ICSMM-6 reflected in the proceedings of a recent festschrift for him under the title Lattice Dynamics and Semiconductor Physics [edited by Jian-Bai Xia et al. (World Scientific, 1990)]. Even a brief perusal of this book clearly reveals the important role of Chinese research in semiconductor science. In addition to many research papers, it contains interesting also reminiscences of early days by C.N. Yang and a tribute by Xide Xie to the strong impact of Prof. Huang as the major pioneer of semiconductor physics in China. Madam Prof. Xide Xie will chair the forthcoming 21st International Conference on the Physics of

Beijing 100083, China Fax: 86-1-256-2389

Prof. H.Z. Zheng

P.O. Box 912

Institute of Semiconductors, CAS
Beijing, China

Fax: 86-1-256-2389
Tel: 86-1-255-8131

Norman J.M. Horing received a Ph.D. in physics from Harvard University in 1964. From 1960-62 and 1962-65 he was a staff physicist at the Massachusetts Institute of Technology Lincoln Laboratory and National Magnet Laboratory, respectively. During 1965-66 he was a staff physicist at the U.S. Naval Research Laboratory. Prof. Horing joined the faculty of the Stevens Institute of Technology in 1966, and has been in his present position as Professor of Physics since 1975. He has been the director of the institute's Academic Support Center since 1987. Prof. Horing's research interests are in quantum many-particle theory, thermodynamic Green's function methods, high magnetic field phenomena, applications to solid state and semiconductor physics and surface physics, theory of surface interactions and surface response properties and collective modes in quantizing magnetic field, low-dimensional systems, superlattices, nonlinear quantum transport, theory, magnetotransport, and hot electron and hot phonon transport in semiconductor microstructure devices. He is a member of the American Physical Society, the New York Academy of Sciences, the Society of the Sigma Xi, and Phi Beta Kappa.