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4. Molecular beam epitaxy, heterostruc- substrates, etc. A representative list of g. Scanning tunneling microscope in
tures, silicon superlattices, and sili- recent research papers of the Surface air.
Physics Laboratory is given in
h. Hot-wall-epitaxy system. 5. Empty surface states of metals and The basic instrumentation of the
semiconductors studied by inverse Fudan Surface Physics Laboratory There are four major research groups photoemission. includes:
at SPL, including a theory group, a
molecular beam epitaxy group, a photo6. Coadsorption study of atoms and a. Angle resolved electron spec- emission group, and a new-surfacemolecules on metals and their oxides. trometer (VG ADES-400), used with technique group. (There is also a
low-energy electron diffraction technician-engineering group.) In all, 7. New methods used in surface anal- (LEED), x-ray photoelectron spec- there are 5 professors, 9 associate proysis and associated fundamental
troscopy (XPS), angle-resolved ultra- fessors, 1 senior engineer, and about physics.
violet photoelectron spectroscopy 7 lecturers, totaling about 22 senior
(ARUPS), high-resolution electron researchers. They also have 5 techniFor example, some recent theoretical energy loss spectroscopy (HREELS), cians and about 25 graduate students research activities at SPL have addressed and a home-made MBE-like growth and several administrators. Further the growth properties and phonon system.
information may be obtained from: spectra of a-Sn/Ge superlattices, geometric and electronic properties of a b. Multifunctional electron spectrom
Director Xun Wang B-SiC(100) surface; electronic structure eter (VG ESCALAB-5), used with Surface Physics Laboratory of II-VI compounds; alkali metal LEED, XPS, Auger electron spec- Modern Physics Institute chemisorption on a GaAs(110) sur- troscopy (AES), ultraviolet photo- Fudan University face; chemisorption of Hon a diamond electron spectroscopy (UPS), and Shanghai 200433, China (001) surface; adsorption of alkali metals secondary ion mass spectroscopy
Tel: 86-21-5484906 X2683 on a Si(111) surface; electronic struc- (SIMS).
Fax: 86-21-3269848 ture of Si(111)-surface-adsorbed Alor Sn; effects of surface barrier thickness c. Ultra-high vacuum (UHV) electron ION BEAM LABORATORY on electronic states in quantum wells; beam evaporator (Riber SSC), three- (IBL), SHANGHAI INSTITUTE structure of very thin metal films; and chamber system with two electron OF METALLURGY, ACADEMIA energy band structure of a two- beam evaporation sources and con- SINICA, SHANGHAI dimensional (2D) lattice of circular troller, reflection high-energy elecquantum dots. Other recent research tron diffraction (RHEED), quadru- The Ion Beam Laboratory of the at SPL is focused on molecular beam pole mass spectrometry (QMS), two Shanghai Institute of Metallurgy epitaxy growth and characterization of thickness monitors, AES, etc. addresses the study of interactions of Ge Six/Si strained layer superlattice
ion beams with solids, as well as ion systems (including temperature depen- d. LEED-AES spectrometer (home beam synthesis and modification of dence of critical thickness for 2D growth, made), used with a 400-1/s ion pump, materials, micromachining, surface rapid thermal annealing studies, high- a stainless steel UHV chamber, analysis, and other fundamental and resolution electron microscopy LEED, CWA, QMS, sputtering ion applied research. Its importance is partly (HREM) studies, Raman spectra
gun, evaporator, and gas inlet line. based on the extensive use of ion implanstudies, Rutherford backscattering,
tation in silicon for the production of electron diffraction studies, X-ray dif- e. Ultra-high vacuum photo-acoustic semiconductor devices and integrated fraction studies, and transmission elec
spectrometer (home made), used circuits in China (and elsewhere). tron microscopy). Moreover, attention with a 400-1/s ion pump, cylindrical Current research activity includes low has also been given to: SOI (silicon on mirror analyzer (CMA), QMS, CO energy ion implantation for the formainsulator) systems, boron doping in Si laser, and PAS signal detector system. tion of shallow junctions and high energy molecular beam epitaxy by coevapora
ion implantation and SOI technology. tion of B2O3, total-current spectros- f. Inverse photoelectron spectrometer
f. Inverse photoelectron spectrometer Applications in telecommunications, copy of surface electronic states on and total-current spectrometer transportation, medicine, etc. employ Si(100), hot-wall-epitaxy growth of ZnSe (home made).
Si-implanted GaAs dual-gate metal and Zn, Mn Se films on GaAs
semiconductor field effector transistors
(MESFETS), GaAs Hall effect sensors, A representative list of recent research Semiconductors (ICPS-21) to be held as well as HgCdTe infrared detectors, titles of the Ion Beam Laboratory is in Beijing (10-14 August 1992). This light-emitting diodes, and laser devices given in Appendix C.
will be a forum of major importance for fabricated by ion implantation. Ion As one of China's first open labora- the presentation of recent research implantation research in metals is also tories of the Academia Sinica, IBL developments in semiconductor physics important for improving wear, corro- accepts foreign visitors as well as Chinese from China and from the world. The sion, oxidation, and fatigue resistance scientists to participate in research satellite Sixth International Conference properties. Reactive ion beam coating within the areas described here, sub- on Superlattices, Microstructures, and has been instrumental in producing ject to the approval of the program Microdevices (ICSMM-6) to be chaired thin films of high-T superconductors committee of the laboratory. Such by Prof. H.Z. Zheng at Xi'an, China (Y,Ba, Cu,0,), etc. Ion beam enhanced arrangements usually last 1 to 2 years (4-7 August 1992), will also be important deposition has been employed to syn- and typically involve two to four to watch for new developments. Inforthesize compound films (Si N ;TiN), researchers. At least part of the work mation about these conferences may and the process has been analyzed by a should be carried out at the lon Beam be obtained as follows: dynamic ion implantation model and a Laboratory, and there is limited fundMonte Carlo simulation.
ing available, restricted to expenses for ICPS-21 In playing a leading role in engaging materials, machining, computation, such studies and applications in China, measurements, and analysis. Further Prof. Xun Wang the Ion Beam Laboratory has recently information relating to application for Secretary ICPS-21 focused on research programs as follows: participation may be obtained from: Physics Department
Fudan University 1. Physical processes of ion beam-solid Director, Ion Beam Laboratory Shanghai 200433, China surface interactions.
Shanghai Institute of Metallurgy Fax: 86-21-326-9843
Academia Sinica 2. Ion beam implantation in elemen- 865 Chang Ning Road
also tal and compound semiconductors. Shanghai 200050, China
Prof. Xide Xie 3. Surface modification of metal and CLOSING REMARKS
Chairperson, ICPS-21 alloy surfaces by ion beams.
One can hardly touch upon the Shanghai 200433, China 4. Surface modification of ceramic subject of semiconductor physics in Telex: 33317 HUAFU CN
surfaces, composite materials, super- China without mention of Kun Huang. Fax: 86-21-326-9843 conductive materials, and diamonds. His important role in developing semi
conductor research in China is amply ICSMM-6 5. Ion beam assisted thin film reflected in the proceedings of a recent techniques.
festschrift for him under the title Lattice Prof. D.S. Jiang
Dynamics and Semiconductor Physics Secretary ICSMM-6 6. Ion beam synthesis of SOI mate- (edited by Jian-Bai Xia et al. (World Institute of Semiconductors, CAS rials and devices.
Scientific, 1990)). Even a brief perusal P.O. Box 912
of this book clearly reveals the impor- Beijing 100083, China 7. Rapid annealing, laser irradiation tant role of Chinese research in semi- Fax: 86-1-256-2389 of semiconductors.
conductor science. In addition to many
research papers, it contains interesting also 8. Research and application of sur- reminiscences of early days by C.N. Yang face analysis by ion beams. and a tribute by Xide Xie to the strong
Prof. H.Z. Zheng impact of Prof. Huang as the major P.O. Box 912 9. Physics and application of ion beam pioneer of semiconductor physics in Institute of Semiconductors, CAS sputtering.
China. Madam Prof. Xide Xie will chair Beijing, China
Norman J.M. Horing roocived a Ph.D. in physics from Harvard University in 1964. From 1960-62 and 1962-65 he was a staff physicist at the Massachusetts Institute of Technology Lincoln Laboratory and National Magnet Laboratory, respectively. During 1965-66 he was a staff physicist at the U.S. Naval Research Labo ratory. Prof. Horing joined the faculty of the Stevens Institute of Technology in 1966, and has been in his present position as Professor of Physics since 1975. He has been the director of the institutes Academic Support Center since 1987. Prof. Horing's research interests are in quantum many-partide theory, thermodynamic Green's function methods, high magnetic field phenomena, applications to solid state and semiconductor physics and surface physics, theory
of surface interactions and surface response properties and collective modes in quantizing magnetic field, low dimensional systems, superlattices, nonlinear quantum transport, theory, magnetotransport, and hot electron and hot phonon transport in semiconductor microstructure devices. He is a member of the American Physical Society, the New York Academy of Sciences, the Society of the Sigma Xi, and Phi Beta Kappa.
Chairman: Prof. N. Miura
1st Hong Kong Workshop on Current Topics in Physics: Semiconductor Physcs, 3-7 August 1992, Hong Kong
5th International Conference on Shallow Impurities in Semiconductors: "Physics and Control of Impurities,” 5-8 August 1992, Kobe, Japan
Chairman: Dr. Ping-Wah Chan
It should be an interesting summer for semiconductor physics in and around China.
TITLES OF RECENT NATIONAL LABORATORY FOR
Microscopic Theory of Optic-Phonon Influences of a Parallel Magnetic Field Investigation of the Electronic StrucRaman Scattering in Quantum Well on Localization of Disordered Two- tures of (GaAs),(AIAs), Short Period System, by Kun Huang et al.
Dimensional Electrons in GaAs/ Superlattices by Photoluminescence
Al Ga, As Heterostructures, by Spectroscopy Under Hydrostatic PresHuang's Dipole Lattice Model as Houzhi Zheng et al.
sure, by Guohua Li et al. Applied to Optical Phonon Modes in 2D and ID Quantum Systems, by Characteristics of Nonresonant Photoluminescence Studies of GaAs/ Bangfen Zhu
Magneto-Tunneling Observed in Asym- AIAs Short Period Superlattices Under
metric GaAs/AIAs Double-Barrier Hydrostatic Pressure, by Guohua Li Raman Scattering in a Superlattice Structures, by Fuhua Yang et al. et al. Under an Electric Field, by Hui Tang et al.
The Physical Origin of Negative Micro-Raman and Photoluminescence
Magneto-Resistances Observed in Studies of Embedded GaAs on Si by T-X Mixing Effect in GaAs/AlAs GaAs/Al Ga. As Heterostructures in
GaAs/Al, Ga, As Heterostructures in Molecular Beam Epitaxy, by Guohua Li Superlattices and Heterojunctions, by the Presence of a Parallel Magnetic et al. Jian-Bai Xia Field, by Haiping Zhou et al.
Raman Scattering of GaAs, P. Mixed Pseudopotential Approach to Long- Studies on Tunneling Characteristics Crystals Under Hydrostatic Pressure, Period Semiconductor Superlattices, of Asymmetric GaAs/AlAs Double- by Guohua Li et al. by Jian-Bai Xia Barrier Structures, by Houzhi Zheng
Long-Wavelength Optical Phonon Electronic Structures and Optical
Spectra of Ge, Al P Mixed Crystals, Properties of Short-Period GaAs/AIAS New Features of Resonant Tunneling by Zhaoping Wang et al. Superlattices, by Jian-Bai Xia et al. in Asymmetric GaAs/AlAs Double
Barrier Structures, by Houzhi Zheng Longitudinal Optical Phonon Modes Semiclassical and Envelope-Function et al.
in GaAs/Al Ga, As Superlattices, by Treatment of Magnetic Levels in Super
Zhaoping Wang et al. lattices Under an In-Plane Magnetic Interaction Effects and Its Influence Field, by Jian-Bai Xia et al.
on Magnetoresistance in Two- Raman Scattering Studies of LO
Dimensional Hole Systems, by Phonons in GaAs/A10.33 Ga.67As SuperTemperature Dependence of the Houzhi Zheng
lattices, by Z.P. Wang et al. Cyclotron Resonance Linewidth in a GaAs-AlGaAs Heterostructure, by Progress of Semiconductor Superlat- Comparative Study of PhotolumiXiaoguang Wu et al. tice Science in China, by Houzhi Zheng nescence of Ino.is
nescence of In..1s Ga.es As/GaAs and Photoluminescence of Strained GaInAs/ GaAs/Al. Ga. As Quantum Wells Subband Structure of GaAs/AIGaAs AIGaAs Quantum Well Structures, by Under Hydrostatic Pressure, by Superlattices Under Crossed Electric Xinghua Wang et al.
Li Guhua Zheng et al. and Magnetic Fields, by Wei-Jun Fan et al.
Transport Properties of GaAs/AIGaAs Fermi Edge Singularity in the Lumi
Quantum Wells, by Xinghua Wang et al. nescence of Modulation-Doped Nonresonant Magneto-Tunneling in
Ga.471no.s3As/Alo.48.no.52As Single Asymmetric GaAs/AIAs Double Bar- Measurements of Hot Electron Mag. Heterojunctions, by Yong-Hang Zhang rier Structures, by Houzhi Zheng et al. netophonon Resonance in GaAs/ et al.
Al GaAs Heterostructures, by
Photoreflectance Study on Modulation. Influences of Alloy Disorder and Inter- Physical Behavior of Ruthenium in
InGaAs/GaAs Strained-Layer Quan-
Deep Levels in Silicon as a Result of Experimental Investigation of GaAs/
Co-sputtering, by Liwu Lu GaAIAs Quantum Confined Stark Photoluminescence Excitation SpecEffect and Self Electro-Optic Bistable troscopy of In GaAs/GaAs Strained- A New Possible Interpretation About Effect, by Ronghan Wu et al.
Layer Coupled Double Quantum Wells, DX Center in AlGaAs:Si, by M.F. Li by Q. Xu et al.
et al. Optical Characterization of Interface Behavior in GaAs-GaAIAs Multiple A New Possible Interpretation About Three Pulse DLYS Method Proposed Quantum Well Structures, by DX Centers in Al, Ga, As:Si, by M.F.Li to Eliminate the Edge Region Effect Xhongying Xu et al. et al.
and Its Applications to the Measure
ments of DX-Center Capture Barriers, Optical Investigation of d-Doping in C-V Analysis of DX Centers in AlGaAs, by Maohai Xie et al. Quantum Well Structures, by by Y.B. Jia et al. Zhongying Xu et al.
Theoretical Study of the Pd-B ComA New Transient CV Method in Studies plex in Silicon, by Jian Wu et al. Analysis of Optical Gain Spectra in of DX Centers in AlGaAs, by Y.B.Jia GaAs/AIGaAs Graded-Index Separate - et al.
Reply to “Comment on Negative-U Confinement Single Quantum Well
Property of the DX Center in Structures, by Baozhin Zheng et al. Physical Behavior of Zinc-Implanted Al, Ga. As:Si,” by M.F. Li et al.
Silicon, by Liwu Lu et al.