Switchmode RF Power AmplifiersNewnes, 2011. gada 1. apr. - 448 lappuses A majority of people now have a digital mobile device whether it be a cell phone, laptop, or blackberry. Now that we have the mobility we want it to be more versatile and dependable; RF power amplifiers accomplish just that. These amplifiers take a small input and make it stronger and larger creating a wider area of use with a more robust signal. Switching mode RF amplifiers have been theoretically possible for decades, but were largely impractical because they distort analog signals until they are unrecognizable. However, distortion is not an issue with digital signals—like those used by WLANs and digital cell phones—and switching mode RF amplifiers have become a hot area of RF/wireless design. This book explores both the theory behind switching mode RF amplifiers and design techniques for them. *Provides essential design and implementation techniques for use in cma2000, WiMAX, and other digital mobile standards *Both authors have written several articles on the topic and are well known in the industry *Includes specific design equations to greatly simplify the design of switchmode amplifiers |
No grāmatas satura
1.–5. rezultāts no 85.
xiv. lappuse
... transistor saturation resistance, rectangular and sinusoidal driving signals, nonzero switching transition times, and parasitic shunt capacitance and series inductance. We describe practical design examples of voltage-switching and ...
... transistor saturation resistance, rectangular and sinusoidal driving signals, nonzero switching transition times, and parasitic shunt capacitance and series inductance. We describe practical design examples of voltage-switching and ...
xvi. lappuse
... transistor must discharge its output capacitance from the peak voltage to zero in every RF cycle. As a result, the transistor must be sufficiently small to reduce the capacitordischarge power dissipation to an acceptable level. Finally ...
... transistor must discharge its output capacitance from the peak voltage to zero in every RF cycle. As a result, the transistor must be sufficiently small to reduce the capacitordischarge power dissipation to an acceptable level. Finally ...
17. lappuse
... transistor with extrinsic parasitic elements [12, 13]. This hybrid-T equivalent circuit can model the nonlinear electrical behavior of bipolar transistors, in particularly HBT devices, with sufficient accuracy up to about 20 GHz. The ...
... transistor with extrinsic parasitic elements [12, 13]. This hybrid-T equivalent circuit can model the nonlinear electrical behavior of bipolar transistors, in particularly HBT devices, with sufficient accuracy up to about 20 GHz. The ...
18. lappuse
... transistor, take into account the parasitic p-n-p transistor formed by the base, collector, and substrate regions, provide an improved description of depletion capacitances at large forward bias, and take into account avalanche and ...
... transistor, take into account the parasitic p-n-p transistor formed by the base, collector, and substrate regions, provide an improved description of depletion capacitances at large forward bias, and take into account avalanche and ...
19. lappuse
... transistor nonlinear models, for a bipolar transistor shown in Fig. 1.10(b) and for the MOSFET or MESFET devices shown in Fig. 1.9, it is clear to see the circuit similarity of all these equivalent circuits, which means that the basic ...
... transistor nonlinear models, for a bipolar transistor shown in Fig. 1.10(b) and for the MOSFET or MESFET devices shown in Fig. 1.9, it is clear to see the circuit similarity of all these equivalent circuits, which means that the basic ...
Saturs
1 | |
ClassD Power Amplifiers | 55 |
ClassF Power Amplifiers | 95 |
Inverse Class F | 151 |
Class E with Shunt Capacitance | 179 |
Class E with Finite dcFeed Inductance | 233 |
Class E with Quarterwave Transmission Line | 293 |
Alternative and MixedMode HighEfficiency Power Amplifiers | 315 |
ComputerAided Design of SwitchedMode Power Amplifiers | 363 |
421 | |
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Bieži izmantoti vārdi un frāzes
achieved active device biharmonic bipolar capacitor characteristic impedance circuit schematic Class-AB Class-E load network Class-E mode Class-E power amplifier CMOS collector capacitance collector current collector efficiency collector voltage conduction angle configuration Cout current flowing current waveforms drain efficiency electrical length equivalent circuit Figure fundamental frequency fundamental-frequency half-sinusoidal harmonic components high-efficiency ideal IEEE IEEE Trans Imax inductor input inverse Class-F LC circuit load resistance matching circuit maximum microstrip microstrip line Microwave MOSFET nonlinear open-circuit operating frequency operation mode optimization oscillations output power output-matching circuit parallel-circuit Class-E parasitic peak phase pinch-off power gain power losses power-added efficiency push-pull quarter-wave transmission line reactance resonant circuit result RF choke saturation resistance second harmonic series inductance shown in Fig shunt capacitance simulation sinusoidal stub supply voltage switch switched-mode third harmonic transformer transistor transmission-line Tuned Power Amplifier voltage and current voltage waveform Vsat
Populāri fragmenti
xi. lappuse - He received the BS and MS degrees in electrical engineering from the Massachusetts Institute of Technology, Cambridge, in 1957, and the Ph.D.