Switchmode RF Power AmplifiersNewnes, 2011. gada 1. apr. - 448 lappuses A majority of people now have a digital mobile device whether it be a cell phone, laptop, or blackberry. Now that we have the mobility we want it to be more versatile and dependable; RF power amplifiers accomplish just that. These amplifiers take a small input and make it stronger and larger creating a wider area of use with a more robust signal. Switching mode RF amplifiers have been theoretically possible for decades, but were largely impractical because they distort analog signals until they are unrecognizable. However, distortion is not an issue with digital signalslike those used by WLANs and digital cell phonesand switching mode RF amplifiers have become a hot area of RF/wireless design. This book explores both the theory behind switching mode RF amplifiers and design techniques for them. *Provides essential design and implementation techniques for use in cma2000, WiMAX, and other digital mobile standards *Both authors have written several articles on the topic and are well known in the industry *Includes specific design equations to greatly simplify the design of switchmode amplifiers |
No grāmatas satura
1.5. rezultāts no 74.
1. lappuse
... electrical characteristics like output power, power gain, efficiency, stability, or harmonic suppression is to use a spectral-domain analysis. Generally, such an analysis is based on the determination of the output response of the ...
... electrical characteristics like output power, power gain, efficiency, stability, or harmonic suppression is to use a spectral-domain analysis. Generally, such an analysis is based on the determination of the output response of the ...
2. lappuse
... power amplifier in the form of the output power and efficiency. In this case, a technique based on a piecewise-linear approximation of the device transfer function can provide a clear insight into the basic behavior of a power amplifier ...
... power amplifier in the form of the output power and efficiency. In this case, a technique based on a piecewise-linear approximation of the device transfer function can provide a clear insight into the basic behavior of a power amplifier ...
9. lappuse
... output power, IV P = 1.27 2 (1.27) is the power delivered to the load resistance R at the fundamental frequency fo, and V - (1.28) § Vcc is the collector Voltage peak factor. Then, by assuming the ideal conditions of zero saturation ...
... output power, IV P = 1.27 2 (1.27) is the power delivered to the load resistance R at the fundamental frequency fo, and V - (1.28) § Vcc is the collector Voltage peak factor. Then, by assuming the ideal conditions of zero saturation ...
27. lappuse
... power amplifier, let us consider the load network including a series resonant L0C0 circuit tuned to the fundamental frequency that provides open-circuit conditions for second and higher-order harmonic components of the output current ...
... power amplifier, let us consider the load network including a series resonant L0C0 circuit tuned to the fundamental frequency that provides open-circuit conditions for second and higher-order harmonic components of the output current ...
30. lappuse
... Power Amplifiers Generally, if it is necessary to increase the overall output power of the power amplifier, several active devices can be used in parallel or pushpull configurations. In a parallel configuration, the active devices are ...
... Power Amplifiers Generally, if it is necessary to increase the overall output power of the power amplifier, several active devices can be used in parallel or pushpull configurations. In a parallel configuration, the active devices are ...
Saturs
1 | |
ClassD Power Amplifiers | 55 |
ClassF Power Amplifiers | 95 |
Inverse Class F | 151 |
Class E with Shunt Capacitance | 179 |
Class E with Finite dcFeed Inductance | 233 |
Class E with Quarterwave Transmission Line | 293 |
Alternative and MixedMode HighEfficiency Power Amplifiers | 315 |
ComputerAided Design of SwitchedMode Power Amplifiers | 363 |
421 | |
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Bieži izmantoti vārdi un frāzes
achieved active device biharmonic bipolar capacitor characteristic impedance circuit schematic Class-AB Class-E load network Class-E mode Class-E power amplifier CMOS collector capacitance collector current collector efficiency collector voltage conduction angle configuration Cout current flowing current waveforms drain efficiency electrical length equivalent circuit Figure fundamental frequency fundamental-frequency half-sinusoidal harmonic components high-efficiency ideal IEEE IEEE Trans Imax inductor input inverse Class-F LC circuit load resistance matching circuit maximum microstrip microstrip line Microwave MOSFET nonlinear open-circuit operating frequency operation mode optimization oscillations output power output-matching circuit parallel-circuit Class-E parasitic peak phase pinch-off power gain power losses power-added efficiency push-pull quarter-wave transmission line reactance resonant circuit result RF choke saturation resistance second harmonic series inductance shown in Fig shunt capacitance simulation sinusoidal stub supply voltage switch switched-mode third harmonic transformer transistor transmission-line Tuned Power Amplifier voltage and current voltage waveform Vsat
Populāri fragmenti
xi. lappuse - He received the BS and MS degrees in electrical engineering from the Massachusetts Institute of Technology, Cambridge, in 1957, and the Ph.D.