Switchmode RF Power AmplifiersNewnes, 2011. gada 1. apr. - 448 lappuses A majority of people now have a digital mobile device whether it be a cell phone, laptop, or blackberry. Now that we have the mobility we want it to be more versatile and dependable; RF power amplifiers accomplish just that. These amplifiers take a small input and make it stronger and larger creating a wider area of use with a more robust signal. Switching mode RF amplifiers have been theoretically possible for decades, but were largely impractical because they distort analog signals until they are unrecognizable. However, distortion is not an issue with digital signalslike those used by WLANs and digital cell phonesand switching mode RF amplifiers have become a hot area of RF/wireless design. This book explores both the theory behind switching mode RF amplifiers and design techniques for them. *Provides essential design and implementation techniques for use in cma2000, WiMAX, and other digital mobile standards *Both authors have written several articles on the topic and are well known in the industry *Includes specific design equations to greatly simplify the design of switchmode amplifiers |
No grāmatas satura
1.5. rezultāts no 78.
vii. lappuse
... ................. 344 8.5 Harmonic Tuning Using Load-Pull Techniques.......................................................... 352 References...... 359 Chapter 9: Computer-Aided Design of Switched-Mode Power Amplifiers..............
... ................. 344 8.5 Harmonic Tuning Using Load-Pull Techniques.......................................................... 352 References...... 359 Chapter 9: Computer-Aided Design of Switched-Mode Power Amplifiers..............
xiv. lappuse
... power amplifier can be obtained by applying biharmonic or polyharmonic modes when an additional single-resonant or multi-resonant circuit tuned to the odd harmonics of the fundamental frequency is added to the load network. An infinite ...
... power amplifier can be obtained by applying biharmonic or polyharmonic modes when an additional single-resonant or multi-resonant circuit tuned to the odd harmonics of the fundamental frequency is added to the load network. An infinite ...
xv. lappuse
... power amplifier. Circuit design examples and practical implementations of CMOS Class-E power amplifiers are also given. Chapter 7 presents the results of exact time-domain analysis of the switched-mode tuned Class-E power amplifiers ...
... power amplifier. Circuit design examples and practical implementations of CMOS Class-E power amplifiers are also given. Chapter 7 presents the results of exact time-domain analysis of the switched-mode tuned Class-E power amplifiers ...
12. lappuse
... power amplifier can be significantly improved. Since the parallel LC circuit is tuned to the fundamental frequency, the voltage across the load resistor R can be considered cosinusoidal. By using Eqs. (1.7), (1.22), and (1.30), the ...
... power amplifier can be significantly improved. Since the parallel LC circuit is tuned to the fundamental frequency, the voltage across the load resistor R can be considered cosinusoidal. By using Eqs. (1.7), (1.22), and (1.30), the ...
27. lappuse
... voltage represents a nonlinear function. To evaluate the influence of the nonlinear collector capacitance on electrical behavior of the power amplifier, let us consider the load network including a series resonant L0C0 circuit tuned to ...
... voltage represents a nonlinear function. To evaluate the influence of the nonlinear collector capacitance on electrical behavior of the power amplifier, let us consider the load network including a series resonant L0C0 circuit tuned to ...
Saturs
1 | |
ClassD Power Amplifiers | 55 |
ClassF Power Amplifiers | 95 |
Inverse Class F | 151 |
Class E with Shunt Capacitance | 179 |
Class E with Finite dcFeed Inductance | 233 |
Class E with Quarterwave Transmission Line | 293 |
Alternative and MixedMode HighEfficiency Power Amplifiers | 315 |
ComputerAided Design of SwitchedMode Power Amplifiers | 363 |
421 | |
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Bieži izmantoti vārdi un frāzes
achieved active device biharmonic bipolar capacitor characteristic impedance circuit schematic Class-AB Class-E load network Class-E mode Class-E power amplifier CMOS collector capacitance collector current collector efficiency collector voltage conduction angle configuration Cout current flowing current waveforms drain efficiency electrical length equivalent circuit Figure fundamental frequency fundamental-frequency half-sinusoidal harmonic components high-efficiency ideal IEEE IEEE Trans Imax inductor input inverse Class-F LC circuit load resistance matching circuit maximum microstrip microstrip line Microwave MOSFET nonlinear open-circuit operating frequency operation mode optimization oscillations output power output-matching circuit parallel-circuit Class-E parasitic peak phase pinch-off power gain power losses power-added efficiency push-pull quarter-wave transmission line reactance resonant circuit result RF choke saturation resistance second harmonic series inductance shown in Fig shunt capacitance simulation sinusoidal stub supply voltage switch switched-mode third harmonic transformer transistor transmission-line Tuned Power Amplifier voltage and current voltage waveform Vsat
Populāri fragmenti
xi. lappuse - He received the BS and MS degrees in electrical engineering from the Massachusetts Institute of Technology, Cambridge, in 1957, and the Ph.D.