Plasma Processing XIIG. S. Mathad, D. Misra, K. B. Sundaram The Electrochemical Society, 1998 - 291 lappuses |
No grāmatas satura
1.–5. rezultāts no 49.
vii. lappuse
... Formation in Si3N4 Etch Profile 189 J - H . Ye , P - C . Lee , and M - S . Zhou Reactive Ion Etching of Indium Tin Oxide - HBr Chemistry Y. Kuo Etching Processes : Silicon , Silicide , and Metal Tungsten Silicide / Polysilicon Stack ...
... Formation in Si3N4 Etch Profile 189 J - H . Ye , P - C . Lee , and M - S . Zhou Reactive Ion Etching of Indium Tin Oxide - HBr Chemistry Y. Kuo Etching Processes : Silicon , Silicide , and Metal Tungsten Silicide / Polysilicon Stack ...
2. lappuse
... formation of thin spots in the polysilicon which would clear ahead of the endpoint . Cl2 / 02 chemistry is used in the case of WSix and pure Cl2 in the case of TiN ; low pressure is required for good profile control in this step . The ...
... formation of thin spots in the polysilicon which would clear ahead of the endpoint . Cl2 / 02 chemistry is used in the case of WSix and pure Cl2 in the case of TiN ; low pressure is required for good profile control in this step . The ...
14. lappuse
... formation and the spacing between oxide pitting and polysilicon sidewall during the polysilicon etching . After the main etch step , the etched polysilicon has a positive sloped profile and oxide pitting is created at the bottom of the ...
... formation and the spacing between oxide pitting and polysilicon sidewall during the polysilicon etching . After the main etch step , the etched polysilicon has a positive sloped profile and oxide pitting is created at the bottom of the ...
18. lappuse
... formation . The main reason for the oxide pitting is a higher etch rate of polysilicon near the sidewall feature . The underlying gate oxide is already exposed to the main etch plasma having a lower oxide selectivity and hence ...
... formation . The main reason for the oxide pitting is a higher etch rate of polysilicon near the sidewall feature . The underlying gate oxide is already exposed to the main etch plasma having a lower oxide selectivity and hence ...
49. lappuse
... formation becomes a problem with this technique . Consequently , extensive delooping procedure would be required . In general , string methods would find topological changes somewhat difficult to handle and require significant ...
... formation becomes a problem with this technique . Consequently , extensive delooping procedure would be required . In general , string methods would find topological changes somewhat difficult to handle and require significant ...
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Bieži izmantoti vārdi un frāzes
addition angle aspect ratio atom bottom chamber charging chemistry coil compared concentration damage decrease density dependence deposition depth determined developed device discussed distribution effect electrical electron emission endpoint energy equation etch process etch rate etch stop experimental experiments facet factory field Figure flow flux formation formed function gate oxide higher hole hydrogen important improved increasing indicates inductively intensity ionization isolated layer less loss lower magnetic mass material mean measured mechanism metal neutral nitride observed obtained optical oxide etch oxygen particle patterned photoresist plasma plasma source polymer polysilicon potential pressure radicals reaction reactor reduced region removed resist sccm selectivity shown in Fig shows sidewall signal silicon simulation species step substrate surface Technol temperature thickness tool trench uniformity wafer wall yield
Populāri fragmenti
94. lappuse - Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
i. lappuse - Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark. NJ 07102. USA GRAHAM C GOODWIN Department of Electrical and Computer Engineering University of Newcastle New South Wales.
66. lappuse - Division of Chemistry and Chemical Engineering California Institute of Technology Pasadena, CA...
222. lappuse - Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D Street 2, Singapore 738406...
100. lappuse - Room of the Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University.
231. lappuse - Department of Chemical and Petroleum Engineering University of Kansas, Lawrence, KS 66045 Plasmas powered by multiple frequencies are used in both etching and PECVD applications to improve film characteristics of devices.
79. lappuse - B. Chapman [ Glow Discharge Processes (John Wiley & Sons, New York, 1980) ]; GM Kroesen, FJ de Hoog [ Appl.
231. lappuse - EXPERIMENTAL APPARATUS AND PROCEDURE The schematic of the experimental apparatus is shown in...
70. lappuse - GS Hwang, CM Anderson, MJ Gordon, TA Moore, TK Minton, and KP Giapis, Phys. Rev. Lett. 77, 3049 (1996).
101. lappuse - The schematic of the experimental apparatus is shown in Fig. 1. The...