Plasma Processing XIIG. S. Mathad, D. Misra, K. B. Sundaram The Electrochemical Society, 1998 - 291 lappuses |
No grāmatas satura
1.–5. rezultāts no 76.
2. lappuse
... Experimental Apparatus . The gate etcher used in these experiments is a commercial , inductively coupled gate etcher which has been described elsewhere . [ 3 ] The plasma is generated by a 3 - turn , 30 cm coil which couples to the ...
... Experimental Apparatus . The gate etcher used in these experiments is a commercial , inductively coupled gate etcher which has been described elsewhere . [ 3 ] The plasma is generated by a 3 - turn , 30 cm coil which couples to the ...
6. lappuse
... Experimental Apparatus . The two chambers studied are variations of a commercially available metal etcher . [ 3 ] The plasma is generated by a flat ICP coil which couples to the plasma through a dielectric window , and a second ...
... Experimental Apparatus . The two chambers studied are variations of a commercially available metal etcher . [ 3 ] The plasma is generated by a flat ICP coil which couples to the plasma through a dielectric window , and a second ...
13. lappuse
... EXPERIMENTAL A TCP9400 high density plasma ( HDP ) polysilicon Electrochemical Society Proceedings Volume 98-4 13 Donnelly, and N A Ciampa Plasma Process Induced Physical Damage on Ultra Thin Gate Oxide 13 133 Lee and S Vanhaelemeersch.
... EXPERIMENTAL A TCP9400 high density plasma ( HDP ) polysilicon Electrochemical Society Proceedings Volume 98-4 13 Donnelly, and N A Ciampa Plasma Process Induced Physical Damage on Ultra Thin Gate Oxide 13 133 Lee and S Vanhaelemeersch.
14. lappuse
G. S. Mathad, D. Misra, K. B. Sundaram. EXPERIMENTAL A TCP9400 high density plasma ( HDP ) polysilicon etcher was tested for polysilicon etching . HBr was the main etchant for polysilicon etching ; 3.2 and 4.5nm thick gate oxide has been ...
G. S. Mathad, D. Misra, K. B. Sundaram. EXPERIMENTAL A TCP9400 high density plasma ( HDP ) polysilicon etcher was tested for polysilicon etching . HBr was the main etchant for polysilicon etching ; 3.2 and 4.5nm thick gate oxide has been ...
23. lappuse
... EXPERIMENTAL The experiments were performed on p - type silicon wafers covered with high quality thermal oxides . Active density of acceptors was determined by electrodeless capacitive measurements with surface charge analyzer ( SCA ) ...
... EXPERIMENTAL The experiments were performed on p - type silicon wafers covered with high quality thermal oxides . Active density of acceptors was determined by electrodeless capacitive measurements with surface charge analyzer ( SCA ) ...
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Bieži izmantoti vārdi un frāzes
addition angle aspect ratio atom bottom chamber charging chemistry coil compared concentration damage decrease density dependence deposition depth determined developed device discussed distribution effect electrical electron emission endpoint energy equation etch process etch rate etch stop experimental experiments facet factory field Figure flow flux formation formed function gate oxide higher hole hydrogen important improved increasing indicates inductively intensity ionization isolated layer less loss lower magnetic mass material mean measured mechanism metal neutral nitride observed obtained optical oxide etch oxygen particle patterned photoresist plasma plasma source polymer polysilicon potential pressure radicals reaction reactor reduced region removed resist sccm selectivity shown in Fig shows sidewall signal silicon simulation species step substrate surface Technol temperature thickness tool trench uniformity wafer wall yield
Populāri fragmenti
94. lappuse - Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
i. lappuse - Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark. NJ 07102. USA GRAHAM C GOODWIN Department of Electrical and Computer Engineering University of Newcastle New South Wales.
66. lappuse - Division of Chemistry and Chemical Engineering California Institute of Technology Pasadena, CA...
222. lappuse - Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D Street 2, Singapore 738406...
100. lappuse - Room of the Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University.
231. lappuse - Department of Chemical and Petroleum Engineering University of Kansas, Lawrence, KS 66045 Plasmas powered by multiple frequencies are used in both etching and PECVD applications to improve film characteristics of devices.
79. lappuse - B. Chapman [ Glow Discharge Processes (John Wiley & Sons, New York, 1980) ]; GM Kroesen, FJ de Hoog [ Appl.
231. lappuse - EXPERIMENTAL APPARATUS AND PROCEDURE The schematic of the experimental apparatus is shown in...
70. lappuse - GS Hwang, CM Anderson, MJ Gordon, TA Moore, TK Minton, and KP Giapis, Phys. Rev. Lett. 77, 3049 (1996).
101. lappuse - The schematic of the experimental apparatus is shown in Fig. 1. The...