Plasma Processing XIIG. S. Mathad, D. Misra, K. B. Sundaram The Electrochemical Society, 1998 - 291 lappuses |
No grāmatas satura
1.–5. rezultāts no 32.
v. lappuse
... Charging Damage ...... T. Brozek iii 1 13 133 22 22 Silicon Damage Mechanism in Oxide Etch 229 M. Yang and K. Nakata Plasma Charging in NMOSFET due to Forward and Reverse - Biased Source and Drain Junctions during Metal - 1 Etching 36 D ...
... Charging Damage ...... T. Brozek iii 1 13 133 22 22 Silicon Damage Mechanism in Oxide Etch 229 M. Yang and K. Nakata Plasma Charging in NMOSFET due to Forward and Reverse - Biased Source and Drain Junctions during Metal - 1 Etching 36 D ...
13. lappuse
... charging damage from the gate polysilicon patterning . INTRODUCTION As device density is continually scaled down , plasma charging damage has become crucial for the fabrication of integrated circuit . Plasma process induced damage can ...
... charging damage from the gate polysilicon patterning . INTRODUCTION As device density is continually scaled down , plasma charging damage has become crucial for the fabrication of integrated circuit . Plasma process induced damage can ...
14. lappuse
... charging , etch rate near the sidewall is increased and the underlying gate oxide is already exposed to the main etch plasma having a lower oxide selectivity and hence , resulting in oxide pitting . Fig . 4 illustrates the mechanism of ...
... charging , etch rate near the sidewall is increased and the underlying gate oxide is already exposed to the main etch plasma having a lower oxide selectivity and hence , resulting in oxide pitting . Fig . 4 illustrates the mechanism of ...
15. lappuse
... charging is the main cause for oxide pitting and residual Cl atoms cause notching at the bottom corner of the feature . SiO , hard mask in combination with a Br / O , chemistry provides an oxide pitting and notching free gate patterning ...
... charging is the main cause for oxide pitting and residual Cl atoms cause notching at the bottom corner of the feature . SiO , hard mask in combination with a Br / O , chemistry provides an oxide pitting and notching free gate patterning ...
22. lappuse
... CHARGING DAMAGE Tomasz Brożek CISD , Motorola , MD : M200 2200 West Broadway Rd . , Mesa , AZ8520 Plasma exposure of silicon wafers may affect electrical properties of semiconductors in several ways . Defects generated in silicon and ...
... CHARGING DAMAGE Tomasz Brożek CISD , Motorola , MD : M200 2200 West Broadway Rd . , Mesa , AZ8520 Plasma exposure of silicon wafers may affect electrical properties of semiconductors in several ways . Defects generated in silicon and ...
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Bieži izmantoti vārdi un frāzes
addition angle aspect ratio atom bottom chamber charging chemistry coil compared concentration damage decrease density dependence deposition depth determined developed device discussed distribution effect electrical electron emission endpoint energy equation etch process etch rate etch stop experimental experiments facet factory field Figure flow flux formation formed function gate oxide higher hole hydrogen important improved increasing indicates inductively intensity ionization isolated layer less loss lower magnetic mass material mean measured mechanism metal neutral nitride observed obtained optical oxide etch oxygen particle patterned photoresist plasma plasma source polymer polysilicon potential pressure radicals reaction reactor reduced region removed resist sccm selectivity shown in Fig shows sidewall signal silicon simulation species step substrate surface Technol temperature thickness tool trench uniformity wafer wall yield
Populāri fragmenti
94. lappuse - Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
i. lappuse - Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark. NJ 07102. USA GRAHAM C GOODWIN Department of Electrical and Computer Engineering University of Newcastle New South Wales.
66. lappuse - Division of Chemistry and Chemical Engineering California Institute of Technology Pasadena, CA...
222. lappuse - Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D Street 2, Singapore 738406...
100. lappuse - Room of the Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University.
231. lappuse - Department of Chemical and Petroleum Engineering University of Kansas, Lawrence, KS 66045 Plasmas powered by multiple frequencies are used in both etching and PECVD applications to improve film characteristics of devices.
79. lappuse - B. Chapman [ Glow Discharge Processes (John Wiley & Sons, New York, 1980) ]; GM Kroesen, FJ de Hoog [ Appl.
231. lappuse - EXPERIMENTAL APPARATUS AND PROCEDURE The schematic of the experimental apparatus is shown in...
70. lappuse - GS Hwang, CM Anderson, MJ Gordon, TA Moore, TK Minton, and KP Giapis, Phys. Rev. Lett. 77, 3049 (1996).
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