Plasma Processing XIIG. S. Mathad, D. Misra, K. B. Sundaram The Electrochemical Society, 1998 - 291 lappuses |
No grāmatas satura
1.–5. rezultāts no 100.
4. lappuse
... Figure 3. In this case , the bottom layer of the gate stack was amorphous silicon instead of polysilicon , and ellipsometry was used to terminate the main etch before endpoint . Stopping the etch with 100-300 nm of amorphous silicon ...
... Figure 3. In this case , the bottom layer of the gate stack was amorphous silicon instead of polysilicon , and ellipsometry was used to terminate the main etch before endpoint . Stopping the etch with 100-300 nm of amorphous silicon ...
5. lappuse
... Figure 2. Lattice images via TEM showing a 0.12 um gate stack ( a ) and focusing on the bottom right corner of the gate ( b ) . Note that 1-2 monolayers of the Si substrate next to the gate ( right hand side ) have been removed during ...
... Figure 2. Lattice images via TEM showing a 0.12 um gate stack ( a ) and focusing on the bottom right corner of the gate ( b ) . Note that 1-2 monolayers of the Si substrate next to the gate ( right hand side ) have been removed during ...
7. lappuse
... Figure 4a shows damage data for PMOS testers with antennae at metal 1 etched in Chamber A with a source power or 400 W , compared to damage data from a low density etcher . The test set includes both testers with large areas and large ...
... Figure 4a shows damage data for PMOS testers with antennae at metal 1 etched in Chamber A with a source power or 400 W , compared to damage data from a low density etcher . The test set includes both testers with large areas and large ...
8. lappuse
... Figure 5 as a function of ion current . The result is shown in Figure 7 : it is clear that the dependence of plasma damage on ion current is different for the modified chamber . Other plasma or process variables must contribute to the ...
... Figure 5 as a function of ion current . The result is shown in Figure 7 : it is clear that the dependence of plasma damage on ion current is different for the modified chamber . Other plasma or process variables must contribute to the ...
9. lappuse
... Figure 9 . The variations in ion current with time are due to the changing etch products present as different layers in the stack are etched . The dependence of plasma nonuniformity on chamber height is roughly the same as that observed ...
... Figure 9 . The variations in ion current with time are due to the changing etch products present as different layers in the stack are etched . The dependence of plasma nonuniformity on chamber height is roughly the same as that observed ...
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Bieži izmantoti vārdi un frāzes
addition angle aspect ratio atom bottom chamber charging chemistry coil compared concentration damage decrease density dependence deposition depth determined developed device discussed distribution effect electrical electron emission endpoint energy equation etch process etch rate etch stop experimental experiments facet factory field Figure flow flux formation formed function gate oxide higher hole hydrogen important improved increasing indicates inductively intensity ionization isolated layer less loss lower magnetic mass material mean measured mechanism metal neutral nitride observed obtained optical oxide etch oxygen particle patterned photoresist plasma plasma source polymer polysilicon potential pressure radicals reaction reactor reduced region removed resist sccm selectivity shown in Fig shows sidewall signal silicon simulation species step substrate surface Technol temperature thickness tool trench uniformity wafer wall yield
Populāri fragmenti
94. lappuse - Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
i. lappuse - Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark. NJ 07102. USA GRAHAM C GOODWIN Department of Electrical and Computer Engineering University of Newcastle New South Wales.
66. lappuse - Division of Chemistry and Chemical Engineering California Institute of Technology Pasadena, CA...
222. lappuse - Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D Street 2, Singapore 738406...
100. lappuse - Room of the Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University.
231. lappuse - Department of Chemical and Petroleum Engineering University of Kansas, Lawrence, KS 66045 Plasmas powered by multiple frequencies are used in both etching and PECVD applications to improve film characteristics of devices.
79. lappuse - B. Chapman [ Glow Discharge Processes (John Wiley & Sons, New York, 1980) ]; GM Kroesen, FJ de Hoog [ Appl.
231. lappuse - EXPERIMENTAL APPARATUS AND PROCEDURE The schematic of the experimental apparatus is shown in...
70. lappuse - GS Hwang, CM Anderson, MJ Gordon, TA Moore, TK Minton, and KP Giapis, Phys. Rev. Lett. 77, 3049 (1996).
101. lappuse - The schematic of the experimental apparatus is shown in Fig. 1. The...