Plasma Processing XII

addition angle aspect ratio atom bottom chamber charging chemistry coil compared concentration damage decrease density dependence deposition depth determined developed device discussed distribution effect electrical electron emission endpoint energy equation etch process etch rate etch stop experimental experiments facet factory field Figure flow flux formation formed function gate oxide higher hole hydrogen important improved increasing indicates inductively intensity ionization isolated layer less loss lower magnetic mass material mean measured mechanism metal neutral nitride observed obtained optical oxide etch oxygen particle patterned photoresist plasma plasma source polymer polysilicon potential pressure radicals reaction reactor reduced region removed resist sccm selectivity shown in Fig shows sidewall signal silicon simulation species step substrate surface Technol temperature thickness tool trench uniformity wafer wall yield