ONR Far East Scientific BulletinOffice of Naval Research, Liaison Office, Far East, 1987 |
No grāmatas satura
1.–5. rezultāts no 100.
. lappuse
... method for the printing of creative designs on quality , handmade paper . This technique expresses the essence of Japanese aesthetic sense through the use of handmade washi paper , rice paste , sensitive natural colors , and the ...
... method for the printing of creative designs on quality , handmade paper . This technique expresses the essence of Japanese aesthetic sense through the use of handmade washi paper , rice paste , sensitive natural colors , and the ...
4. lappuse
... methods , ( 2 ) resonant tunneling devices , ( 3 ) hot electron transistors and ballistic transport , ( 4 ) high electron mobility transistors and heterojunction bipolar transistors , and ( 5 ) new heterostructure materials . The papers ...
... methods , ( 2 ) resonant tunneling devices , ( 3 ) hot electron transistors and ballistic transport , ( 4 ) high electron mobility transistors and heterojunction bipolar transistors , and ( 5 ) new heterostructure materials . The papers ...
5. lappuse
... methods of growth that allow lower substrate tem- peratures are therefore often extolled by their inventors for this virtue . Once the new atoms have ... method of increasing the diffusion length , developed ONRFE SCI BUL 12 ( 1 ) 87 5.
... methods of growth that allow lower substrate tem- peratures are therefore often extolled by their inventors for this virtue . Once the new atoms have ... method of increasing the diffusion length , developed ONRFE SCI BUL 12 ( 1 ) 87 5.
6. lappuse
... method , both fluxes are shut off first . Then a shot of gallium sufficient for monolayer coverage is evaporated onto the surface and allowed to migrate about . It is found that under these conditions , the gallium mobility is greatly ...
... method , both fluxes are shut off first . Then a shot of gallium sufficient for monolayer coverage is evaporated onto the surface and allowed to migrate about . It is found that under these conditions , the gallium mobility is greatly ...
7. lappuse
... method , the substrate temperature was lowered to 200 ° C for GaAs and 300 ° C for AlGaAs , a most important achievement . The higher temperature for the latter is required because of the lower surface mobility of Al as compared to Ga ...
... method , the substrate temperature was lowered to 200 ° C for GaAs and 300 ° C for AlGaAs , a most important achievement . The higher temperature for the latter is required because of the lower surface mobility of Al as compared to Ga ...
Bieži izmantoti vārdi un frāzes
11 National Circuit Academia Sinica alloys alumina analysis Appl applications Atomic Australia 11 National Beijing boundary layer carbon fiber Center ceramics CFRC chemical China Chiyoda-ku composites Congress crack crystal Department devices effect electrical electron energy Engineering epitaxy experimental fiber Figure film flaw flexural flow fracture toughness Fukuda GaAs growth Hashimoto industrial Institute of Technology International Conference ion beam ion implantation Ishida Japan Japanese Kyoto University laser materials mechanical metals meters method Minato-ku Miyauchi molecular beam epitaxy Nakashima Nanjing Naval Osaka oxide papers percent phase Phys Physics plasma Plasma Physics POSTECH presented processing Professor propeller radar reported Research Institute Sakyo-ku Science and Technology semi-insulating semiconductor Shanghai ship silicon nitride sintering Society Steel strength stress structure superconducting superlattices surface Symposium techniques temperature tensile thermal tion tokamak University of Tokyo velocity Wang wave
Populāri fragmenti
104. lappuse - Since 1963 he has been a Professor of Electrical Engineering and Computer Science at the University of Southern California, Los Angeles.
104. lappuse - He is a member of Eta Kappa Nu, Tau Beta Pi, and Sigma Xi.
50. lappuse - Ph.D. in naval architecture and marine engineering from the University of Michigan in 1980.
i. lappuse - Engineers 8b OFFICE SYMBOL (If applicable) 9. PROCUREMENT INSTRUMENT IDENTIFICATION NUMBER 8c. ADDRESS (City, State, and ZIP Code) Washington, DC 20314-1000 10.
109. lappuse - System," conducted under a program set by the Agency of Industrial Science and Technology, Ministry of International Trade and Industry.
81. lappuse - Institute for Medical and Dental Engineering, Tokyo Medical and Dental University, 2-3-10...
113. lappuse - Dept. of Physical Electronics, Tokyo Institute of Technology 2-12-1 Oh-okayama, Meguro-ku, Tokyo 152, Japan. ABSTRACT A novel technique has been proposed for selective and in-situ excimer-laser crystallization and doping to thin poly-Si films.
13. lappuse - A design method in which appropriate levels of structural reliability are provided, on a structural element (member) basis, by the specification of a number of partial safety factors related to some pre-defined characteristic values of the basic variables. Characteristic values are given as functions of mean values, coefficients of variation and distribution types.
i. lappuse - FORM 1473, 84 MAR 83 APR edition may be used until exhausted All other editions are obsolete SECURITY CLASSIFICATION OF THIS PAGE Unclassified FIELD Unclassified IICUNITV CLAMIPICATION or THIS 6a.