ONR Far East Scientific BulletinOffice of Naval Research, Liaison Office, Far East, 1987 |
No grāmatas satura
1.–5. rezultāts no 65.
5. lappuse
... increases exponentially with tempera- ture . But surface mobility can increased by external energy sources , such as laser beams , again allowing the substrate to remain at a lower temper- ature . Insufficient surface mobility during ...
... increases exponentially with tempera- ture . But surface mobility can increased by external energy sources , such as laser beams , again allowing the substrate to remain at a lower temper- ature . Insufficient surface mobility during ...
6. lappuse
A second method of increasing the diffusion length , developed at NTT Electrical Communication Laboratories in Tokyo , and discussed at this meeting by Y. Horikoshi , is called by them migration enhanced epitaxy ( MEE ) . In this growth ...
A second method of increasing the diffusion length , developed at NTT Electrical Communication Laboratories in Tokyo , and discussed at this meeting by Y. Horikoshi , is called by them migration enhanced epitaxy ( MEE ) . In this growth ...
7. lappuse
... increasing the effective diffusion length of atoms newly absorbed on the surface . The key ingredient was the observation that the effective surface mobility of the Group III atoms greatly increased if the As flux was turned off during ...
... increasing the effective diffusion length of atoms newly absorbed on the surface . The key ingredient was the observation that the effective surface mobility of the Group III atoms greatly increased if the As flux was turned off during ...
9. lappuse
... increased , the levels will start to go out of alignment , and the current will decrease with increasing field . In this region the device displays negative differential resistance because current decreases as field increases . This is ...
... increased , the levels will start to go out of alignment , and the current will decrease with increasing field . In this region the device displays negative differential resistance because current decreases as field increases . This is ...
10. lappuse
... increased , the quantized energy levels drop in energy relative to the top of the barrier , so indirectly , increasing the well width is like increasing the barrier height . Note that the peak energy for tunneling also drops , which ...
... increased , the quantized energy levels drop in energy relative to the top of the barrier , so indirectly , increasing the well width is like increasing the barrier height . Note that the peak energy for tunneling also drops , which ...
Bieži izmantoti vārdi un frāzes
11 National Circuit Academia Sinica alloys alumina analysis Appl applications Atomic Australia 11 National Beijing boundary layer carbon fiber Center ceramics CFRC chemical China Chiyoda-ku composites Congress crack crystal Department devices effect electrical electron energy Engineering epitaxy experimental fiber Figure film flaw flexural flow fracture toughness Fukuda GaAs growth Hashimoto industrial Institute of Technology International Conference ion beam ion implantation Ishida Japan Japanese Kyoto University laser materials mechanical metals meters method Minato-ku Miyauchi molecular beam epitaxy Nakashima Nanjing Naval Osaka oxide papers percent phase Phys Physics plasma Plasma Physics POSTECH presented processing Professor propeller radar reported Research Institute Sakyo-ku Science and Technology semi-insulating semiconductor Shanghai ship silicon nitride sintering Society Steel strength stress structure superconducting superlattices surface Symposium techniques temperature tensile thermal tion tokamak University of Tokyo velocity Wang wave
Populāri fragmenti
104. lappuse - Since 1963 he has been a Professor of Electrical Engineering and Computer Science at the University of Southern California, Los Angeles.
104. lappuse - He is a member of Eta Kappa Nu, Tau Beta Pi, and Sigma Xi.
50. lappuse - Ph.D. in naval architecture and marine engineering from the University of Michigan in 1980.
i. lappuse - Engineers 8b OFFICE SYMBOL (If applicable) 9. PROCUREMENT INSTRUMENT IDENTIFICATION NUMBER 8c. ADDRESS (City, State, and ZIP Code) Washington, DC 20314-1000 10.
109. lappuse - System," conducted under a program set by the Agency of Industrial Science and Technology, Ministry of International Trade and Industry.
81. lappuse - Institute for Medical and Dental Engineering, Tokyo Medical and Dental University, 2-3-10...
113. lappuse - Dept. of Physical Electronics, Tokyo Institute of Technology 2-12-1 Oh-okayama, Meguro-ku, Tokyo 152, Japan. ABSTRACT A novel technique has been proposed for selective and in-situ excimer-laser crystallization and doping to thin poly-Si films.
13. lappuse - A design method in which appropriate levels of structural reliability are provided, on a structural element (member) basis, by the specification of a number of partial safety factors related to some pre-defined characteristic values of the basic variables. Characteristic values are given as functions of mean values, coefficients of variation and distribution types.
i. lappuse - FORM 1473, 84 MAR 83 APR edition may be used until exhausted All other editions are obsolete SECURITY CLASSIFICATION OF THIS PAGE Unclassified FIELD Unclassified IICUNITV CLAMIPICATION or THIS 6a.