ONR Far East Scientific BulletinOffice of Naval Research, Liaison Office, Far East, 1987 |
No grāmatas satura
1.–5. rezultāts no 91.
5. lappuse
... energy electron diffraction ( RHEED ) in situ to monitor the actual growth . In CVD , it is necessary to sepa- rate the desired atoms at the surface from their carrier gas , and this can be done by pyrolysis on a heated substrate , or ...
... energy electron diffraction ( RHEED ) in situ to monitor the actual growth . In CVD , it is necessary to sepa- rate the desired atoms at the surface from their carrier gas , and this can be done by pyrolysis on a heated substrate , or ...
8. lappuse
... energy barrier at the interface between two semiconductors ( heterojunctions ) allows one to construct potential wells in which the energy levels are quantized because the electrons are spatially confined to the potential well . It is ...
... energy barrier at the interface between two semiconductors ( heterojunctions ) allows one to construct potential wells in which the energy levels are quantized because the electrons are spatially confined to the potential well . It is ...
9. lappuse
... energy levels will be quantized in the well , and outside the barriers there will be a continuum of levels representing the bulk material conduction band . The conduction band will be occupied with electrons up to the Fermi level , and ...
... energy levels will be quantized in the well , and outside the barriers there will be a continuum of levels representing the bulk material conduction band . The conduction band will be occupied with electrons up to the Fermi level , and ...
10. lappuse
... energy levels drop in energy relative to the top of the barrier , so indirectly , increasing the well width is like increasing the barrier height . Note that the peak energy for tunneling also drops , which allows one to tune the ...
... energy levels drop in energy relative to the top of the barrier , so indirectly , increasing the well width is like increasing the barrier height . Note that the peak energy for tunneling also drops , which allows one to tune the ...
11. lappuse
... energy with which the electrons enter the base . High energy electrons are called " hot , " hence the name HET . The collector for the HET may be formed in various ways , but one form would be a base- collector barrier thick enough to ...
... energy with which the electrons enter the base . High energy electrons are called " hot , " hence the name HET . The collector for the HET may be formed in various ways , but one form would be a base- collector barrier thick enough to ...
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Populāri fragmenti
104. lappuse - Since 1963 he has been a Professor of Electrical Engineering and Computer Science at the University of Southern California, Los Angeles.
104. lappuse - He is a member of Eta Kappa Nu, Tau Beta Pi, and Sigma Xi.
50. lappuse - Ph.D. in naval architecture and marine engineering from the University of Michigan in 1980.
i. lappuse - Engineers 8b OFFICE SYMBOL (If applicable) 9. PROCUREMENT INSTRUMENT IDENTIFICATION NUMBER 8c. ADDRESS (City, State, and ZIP Code) Washington, DC 20314-1000 10.
109. lappuse - System," conducted under a program set by the Agency of Industrial Science and Technology, Ministry of International Trade and Industry.
81. lappuse - Institute for Medical and Dental Engineering, Tokyo Medical and Dental University, 2-3-10...
113. lappuse - Dept. of Physical Electronics, Tokyo Institute of Technology 2-12-1 Oh-okayama, Meguro-ku, Tokyo 152, Japan. ABSTRACT A novel technique has been proposed for selective and in-situ excimer-laser crystallization and doping to thin poly-Si films.
13. lappuse - A design method in which appropriate levels of structural reliability are provided, on a structural element (member) basis, by the specification of a number of partial safety factors related to some pre-defined characteristic values of the basic variables. Characteristic values are given as functions of mean values, coefficients of variation and distribution types.
i. lappuse - FORM 1473, 84 MAR 83 APR edition may be used until exhausted All other editions are obsolete SECURITY CLASSIFICATION OF THIS PAGE Unclassified FIELD Unclassified IICUNITV CLAMIPICATION or THIS 6a.