ONR Far East Scientific BulletinOffice of Naval Research, Liaison Office, Far East, 1987 |
No grāmatas satura
1.–5. rezultāts no 67.
6. lappuse
... described , it is desirable that the A - B bond be much stronger than the other two types . This condition would appear to be more easily met for II - VI compounds such as ZnSe rather than for III - V compounds such as GaAs . Additional ...
... described , it is desirable that the A - B bond be much stronger than the other two types . This condition would appear to be more easily met for II - VI compounds such as ZnSe rather than for III - V compounds such as GaAs . Additional ...
7. lappuse
... for large - scale manufacturing . The digital epitaxy scheme described by Usui used chloride source gases such as GaCl and Ga ( C2H5 ) 2Cl . For example , in the growth of GaAs layers using a GaCl - AsH , ONRFE SCI BUL 12 ( 1 ) 87 7.
... for large - scale manufacturing . The digital epitaxy scheme described by Usui used chloride source gases such as GaCl and Ga ( C2H5 ) 2Cl . For example , in the growth of GaAs layers using a GaCl - AsH , ONRFE SCI BUL 12 ( 1 ) 87 7.
9. lappuse
... described next . The paper by Tsuchiya and Sakaki presented the results of a careful series of studies designed to demonstrate the influence of device design parameters upon the performance characteristics of the devices fabricated ...
... described next . The paper by Tsuchiya and Sakaki presented the results of a careful series of studies designed to demonstrate the influence of device design parameters upon the performance characteristics of the devices fabricated ...
11. lappuse
... described the latest achievements of their group , which include : 1 . 2 . an Oscillators at 56 GHz with power up to 90 μW Oscillators up to 108 GHz with 1 - μW power One of the factors leading to improvement of performance was the ...
... described the latest achievements of their group , which include : 1 . 2 . an Oscillators at 56 GHz with power up to 90 μW Oscillators up to 108 GHz with 1 - μW power One of the factors leading to improvement of performance was the ...
12. lappuse
... described research that he and collaborators at IBM have conducted using an HET as a " spec- trometer " to study the microscopic mechanisms of hot electron transport in solids . Heiblum called his device a tunneling hot electron ...
... described research that he and collaborators at IBM have conducted using an HET as a " spec- trometer " to study the microscopic mechanisms of hot electron transport in solids . Heiblum called his device a tunneling hot electron ...
Bieži izmantoti vārdi un frāzes
11 National Circuit Academia Sinica alloys alumina analysis Appl applications Atomic Australia 11 National Beijing boundary layer carbon fiber Center ceramics CFRC chemical China Chiyoda-ku composites Congress crack crystal Department devices effect electrical electron energy Engineering epitaxy experimental fiber Figure film flaw flexural flow fracture toughness Fukuda GaAs growth Hashimoto industrial Institute of Technology International Conference ion beam ion implantation Ishida Japan Japanese Kyoto University laser materials mechanical metals meters method Minato-ku Miyauchi molecular beam epitaxy Nakashima Nanjing Naval Osaka oxide papers percent phase Phys Physics plasma Plasma Physics POSTECH presented processing Professor propeller radar reported Research Institute Sakyo-ku Science and Technology semi-insulating semiconductor Shanghai ship silicon nitride sintering Society Steel strength stress structure superconducting superlattices surface Symposium techniques temperature tensile thermal tion tokamak University of Tokyo velocity Wang wave
Populāri fragmenti
104. lappuse - Since 1963 he has been a Professor of Electrical Engineering and Computer Science at the University of Southern California, Los Angeles.
104. lappuse - He is a member of Eta Kappa Nu, Tau Beta Pi, and Sigma Xi.
50. lappuse - Ph.D. in naval architecture and marine engineering from the University of Michigan in 1980.
i. lappuse - Engineers 8b OFFICE SYMBOL (If applicable) 9. PROCUREMENT INSTRUMENT IDENTIFICATION NUMBER 8c. ADDRESS (City, State, and ZIP Code) Washington, DC 20314-1000 10.
109. lappuse - System," conducted under a program set by the Agency of Industrial Science and Technology, Ministry of International Trade and Industry.
81. lappuse - Institute for Medical and Dental Engineering, Tokyo Medical and Dental University, 2-3-10...
113. lappuse - Dept. of Physical Electronics, Tokyo Institute of Technology 2-12-1 Oh-okayama, Meguro-ku, Tokyo 152, Japan. ABSTRACT A novel technique has been proposed for selective and in-situ excimer-laser crystallization and doping to thin poly-Si films.
13. lappuse - A design method in which appropriate levels of structural reliability are provided, on a structural element (member) basis, by the specification of a number of partial safety factors related to some pre-defined characteristic values of the basic variables. Characteristic values are given as functions of mean values, coefficients of variation and distribution types.
i. lappuse - FORM 1473, 84 MAR 83 APR edition may be used until exhausted All other editions are obsolete SECURITY CLASSIFICATION OF THIS PAGE Unclassified FIELD Unclassified IICUNITV CLAMIPICATION or THIS 6a.