ONR Far East Scientific BulletinOffice of Naval Research, Liaison Office, Far East, 1987 |
No grāmatas satura
1.–5. rezultāts no 68.
13. lappuse
... change change of source - drain current with gate voltage . The gate is the third electrode used to control the current . Dr. Hasegawa analyzed device performance in terms of the inverse of the transconductance , which he called the ...
... change change of source - drain current with gate voltage . The gate is the third electrode used to control the current . Dr. Hasegawa analyzed device performance in terms of the inverse of the transconductance , which he called the ...
14. lappuse
... change from great novelty attending the original introduction of the ideas to progress in demonstrating their feasibility . Some attendees expressed the view that SLS have still to find their their practical applications niche . A paper ...
... change from great novelty attending the original introduction of the ideas to progress in demonstrating their feasibility . Some attendees expressed the view that SLS have still to find their their practical applications niche . A paper ...
15. lappuse
... changes in electron - phonon interactions in such systems . of the In the final paper workshop , A. Ishizaka of Hitachi's Central Research Laboratory studied the growth modes of NiSi2 epitaxial on Si ( 111 ) surfaces . Studying the ...
... changes in electron - phonon interactions in such systems . of the In the final paper workshop , A. Ishizaka of Hitachi's Central Research Laboratory studied the growth modes of NiSi2 epitaxial on Si ( 111 ) surfaces . Studying the ...
24. lappuse
... changes were planned soon after the 11th Inter- national Conference on Plasma Physics and Controlled Nuclear Fusion Research , which was held in Kyoto on 13-20 November 1986. The details of the planned changes were not available , but ...
... changes were planned soon after the 11th Inter- national Conference on Plasma Physics and Controlled Nuclear Fusion Research , which was held in Kyoto on 13-20 November 1986. The details of the planned changes were not available , but ...
30. lappuse
... changes . Professor Humphreys described convergent beam diffraction pattern analysis used for identifying small crystallographic areas in layer structures . In all of these papers , the application of the techniques was emphasized and ...
... changes . Professor Humphreys described convergent beam diffraction pattern analysis used for identifying small crystallographic areas in layer structures . In all of these papers , the application of the techniques was emphasized and ...
Bieži izmantoti vārdi un frāzes
11 National Circuit Academia Sinica alloys alumina analysis Appl applications Atomic Australia 11 National Beijing boundary layer carbon fiber Center ceramics CFRC chemical China Chiyoda-ku composites Congress crack crystal Department devices effect electrical electron energy Engineering epitaxy experimental fiber Figure film flaw flexural flow fracture toughness Fukuda GaAs growth Hashimoto industrial Institute of Technology International Conference ion beam ion implantation Ishida Japan Japanese Kyoto University laser materials mechanical metals meters method Minato-ku Miyauchi molecular beam epitaxy Nakashima Nanjing Naval Osaka oxide papers percent phase Phys Physics plasma Plasma Physics POSTECH presented processing Professor propeller radar reported Research Institute Sakyo-ku Science and Technology semi-insulating semiconductor Shanghai ship silicon nitride sintering Society Steel strength stress structure superconducting superlattices surface Symposium techniques temperature tensile thermal tion tokamak University of Tokyo velocity Wang wave
Populāri fragmenti
104. lappuse - Since 1963 he has been a Professor of Electrical Engineering and Computer Science at the University of Southern California, Los Angeles.
104. lappuse - He is a member of Eta Kappa Nu, Tau Beta Pi, and Sigma Xi.
50. lappuse - Ph.D. in naval architecture and marine engineering from the University of Michigan in 1980.
i. lappuse - Engineers 8b OFFICE SYMBOL (If applicable) 9. PROCUREMENT INSTRUMENT IDENTIFICATION NUMBER 8c. ADDRESS (City, State, and ZIP Code) Washington, DC 20314-1000 10.
109. lappuse - System," conducted under a program set by the Agency of Industrial Science and Technology, Ministry of International Trade and Industry.
81. lappuse - Institute for Medical and Dental Engineering, Tokyo Medical and Dental University, 2-3-10...
113. lappuse - Dept. of Physical Electronics, Tokyo Institute of Technology 2-12-1 Oh-okayama, Meguro-ku, Tokyo 152, Japan. ABSTRACT A novel technique has been proposed for selective and in-situ excimer-laser crystallization and doping to thin poly-Si films.
13. lappuse - A design method in which appropriate levels of structural reliability are provided, on a structural element (member) basis, by the specification of a number of partial safety factors related to some pre-defined characteristic values of the basic variables. Characteristic values are given as functions of mean values, coefficients of variation and distribution types.
i. lappuse - FORM 1473, 84 MAR 83 APR edition may be used until exhausted All other editions are obsolete SECURITY CLASSIFICATION OF THIS PAGE Unclassified FIELD Unclassified IICUNITV CLAMIPICATION or THIS 6a.