ONR Far East Scientific BulletinOffice of Naval Research, Liaison Office, Far East, 1987 |
No grāmatas satura
1.–5. rezultāts no 56.
5. lappuse
... GaAs , for example , has taken place under what is called arsenic - stabilized conditions . A sufficient flux of arsenic is maintained that all arriving gallium atoms have a very high probability of sticking . The gallium flux is is ...
... GaAs , for example , has taken place under what is called arsenic - stabilized conditions . A sufficient flux of arsenic is maintained that all arriving gallium atoms have a very high probability of sticking . The gallium flux is is ...
6. lappuse
... GaAs . Additional self - terminating pro- cesses were described at this workshop in papers by Usui from NEC and by Aoyagi et al . from RIKEN . Both of these papers presented methods that derived their self - termination from saturated ...
... GaAs . Additional self - terminating pro- cesses were described at this workshop in papers by Usui from NEC and by Aoyagi et al . from RIKEN . Both of these papers presented methods that derived their self - termination from saturated ...
7. lappuse
... GaAs system . With 5 - Angstrom - thick quantum wells , a zero - point shift of 534 meV , the largest yet reported , was achieved . A wide variety of successful applications was reported , but perhaps the most significant result is that ...
... GaAs system . With 5 - Angstrom - thick quantum wells , a zero - point shift of 534 meV , the largest yet reported , was achieved . A wide variety of successful applications was reported , but perhaps the most significant result is that ...
8. lappuse
... GaAs crystals , Usui reported the growth of structures where a layer of Se was introduced at every ninth GaAs plane by introducing H2Se into the system . Such a a structure would be almost impossible to grow by ordinary methods and ...
... GaAs crystals , Usui reported the growth of structures where a layer of Se was introduced at every ninth GaAs plane by introducing H2Se into the system . Such a a structure would be almost impossible to grow by ordinary methods and ...
10. lappuse
... GaAs for the input and output channels , and AlAs for the barrier layers , they alloyed indium into the well material while keeping the well thickness constant . When this is done , the bottom of the conduction band in InGaAs is lower ...
... GaAs for the input and output channels , and AlAs for the barrier layers , they alloyed indium into the well material while keeping the well thickness constant . When this is done , the bottom of the conduction band in InGaAs is lower ...
Bieži izmantoti vārdi un frāzes
11 National Circuit Academia Sinica alloys alumina analysis Appl applications Atomic Australia 11 National Beijing boundary layer carbon fiber Center ceramics CFRC chemical China Chiyoda-ku composites Congress crack crystal Department devices effect electrical electron energy Engineering epitaxy experimental fiber Figure film flaw flexural flow fracture toughness Fukuda GaAs growth Hashimoto industrial Institute of Technology International Conference ion beam ion implantation Ishida Japan Japanese Kyoto University laser materials mechanical metals meters method Minato-ku Miyauchi molecular beam epitaxy Nakashima Nanjing Naval Osaka oxide papers percent phase Phys Physics plasma Plasma Physics POSTECH presented processing Professor propeller radar reported Research Institute Sakyo-ku Science and Technology semi-insulating semiconductor Shanghai ship silicon nitride sintering Society Steel strength stress structure superconducting superlattices surface Symposium techniques temperature tensile thermal tion tokamak University of Tokyo velocity Wang wave
Populāri fragmenti
104. lappuse - Since 1963 he has been a Professor of Electrical Engineering and Computer Science at the University of Southern California, Los Angeles.
104. lappuse - He is a member of Eta Kappa Nu, Tau Beta Pi, and Sigma Xi.
50. lappuse - Ph.D. in naval architecture and marine engineering from the University of Michigan in 1980.
i. lappuse - Engineers 8b OFFICE SYMBOL (If applicable) 9. PROCUREMENT INSTRUMENT IDENTIFICATION NUMBER 8c. ADDRESS (City, State, and ZIP Code) Washington, DC 20314-1000 10.
109. lappuse - System," conducted under a program set by the Agency of Industrial Science and Technology, Ministry of International Trade and Industry.
81. lappuse - Institute for Medical and Dental Engineering, Tokyo Medical and Dental University, 2-3-10...
113. lappuse - Dept. of Physical Electronics, Tokyo Institute of Technology 2-12-1 Oh-okayama, Meguro-ku, Tokyo 152, Japan. ABSTRACT A novel technique has been proposed for selective and in-situ excimer-laser crystallization and doping to thin poly-Si films.
13. lappuse - A design method in which appropriate levels of structural reliability are provided, on a structural element (member) basis, by the specification of a number of partial safety factors related to some pre-defined characteristic values of the basic variables. Characteristic values are given as functions of mean values, coefficients of variation and distribution types.
i. lappuse - FORM 1473, 84 MAR 83 APR edition may be used until exhausted All other editions are obsolete SECURITY CLASSIFICATION OF THIS PAGE Unclassified FIELD Unclassified IICUNITV CLAMIPICATION or THIS 6a.