ONR Far East Scientific BulletinOffice of Naval Research, Liaison Office, Far East, 1987 |
No grāmatas satura
1.–5. rezultāts no 100.
. lappuse
... Center THE UNIVERSITY OF MICHIGAN AUG 1 7 1987 ENGINEERING LIBRARY T University of Michigan Engineering Library APPROVED FOR PUBLIC RELEASE : DISTRIBUTION UNLIMITED NAVSO P - 3580 1 UNCLASSIFIED SECURITY CLASSIFICATION OF THIS PAGE ...
... Center THE UNIVERSITY OF MICHIGAN AUG 1 7 1987 ENGINEERING LIBRARY T University of Michigan Engineering Library APPROVED FOR PUBLIC RELEASE : DISTRIBUTION UNLIMITED NAVSO P - 3580 1 UNCLASSIFIED SECURITY CLASSIFICATION OF THIS PAGE ...
10. lappuse
... center , states dominated the tunneling , even when the indirect states in the alloy were lower in energy ( 0.4 < x < 1.0 ) . In all of these studies , the authors took special care , care , for example , by interrupted growth MBE , to ...
... center , states dominated the tunneling , even when the indirect states in the alloy were lower in energy ( 0.4 < x < 1.0 ) . In all of these studies , the authors took special care , care , for example , by interrupted growth MBE , to ...
12. lappuse
... Center , I. Hase and coworkers , using similar device structure , reported similar results to those obtained by the IBM group , and the findings seem to be in agreement . Explicit demonstration of the scattering gives practical impetus ...
... Center , I. Hase and coworkers , using similar device structure , reported similar results to those obtained by the IBM group , and the findings seem to be in agreement . Explicit demonstration of the scattering gives practical impetus ...
15. lappuse
... Center reported studies of ( AlAs ) m ( GaAs ) n ultrathin superlattices ( UTSL ) , where m and n ranged from 1 to 25 and layer thicknesses were about 400 nm . The materials were grown by MOCVD but shown to be of monolayer abruptness ...
... Center reported studies of ( AlAs ) m ( GaAs ) n ultrathin superlattices ( UTSL ) , where m and n ranged from 1 to 25 and layer thicknesses were about 400 nm . The materials were grown by MOCVD but shown to be of monolayer abruptness ...
17. lappuse
... , Sumitomo Electric Industries Atomic Layer Superlattice A. Ishibashi , Y. Mori , M. Itabashi , and M. Watanabe , Sony Corporation Research Center VI - 4 Si / SiGe Strained Layer Superlattices VI ON RFE SCI BUL 12 ( 1 ) 87 17.
... , Sumitomo Electric Industries Atomic Layer Superlattice A. Ishibashi , Y. Mori , M. Itabashi , and M. Watanabe , Sony Corporation Research Center VI - 4 Si / SiGe Strained Layer Superlattices VI ON RFE SCI BUL 12 ( 1 ) 87 17.
Bieži izmantoti vārdi un frāzes
11 National Circuit Academia Sinica alloys alumina analysis Appl applications Atomic Australia 11 National Beijing boundary layer carbon fiber Center ceramics CFRC chemical China Chiyoda-ku composites Congress crack crystal Department devices effect electrical electron energy Engineering epitaxy experimental fiber Figure film flaw flexural flow fracture toughness Fukuda GaAs growth Hashimoto industrial Institute of Technology International Conference ion beam ion implantation Ishida Japan Japanese Kyoto University laser materials mechanical metals meters method Minato-ku Miyauchi molecular beam epitaxy Nakashima Nanjing Naval Osaka oxide papers percent phase Phys Physics plasma Plasma Physics POSTECH presented processing Professor propeller radar reported Research Institute Sakyo-ku Science and Technology semi-insulating semiconductor Shanghai ship silicon nitride sintering Society Steel strength stress structure superconducting superlattices surface Symposium techniques temperature tensile thermal tion tokamak University of Tokyo velocity Wang wave
Populāri fragmenti
104. lappuse - Since 1963 he has been a Professor of Electrical Engineering and Computer Science at the University of Southern California, Los Angeles.
104. lappuse - He is a member of Eta Kappa Nu, Tau Beta Pi, and Sigma Xi.
50. lappuse - Ph.D. in naval architecture and marine engineering from the University of Michigan in 1980.
i. lappuse - Engineers 8b OFFICE SYMBOL (If applicable) 9. PROCUREMENT INSTRUMENT IDENTIFICATION NUMBER 8c. ADDRESS (City, State, and ZIP Code) Washington, DC 20314-1000 10.
109. lappuse - System," conducted under a program set by the Agency of Industrial Science and Technology, Ministry of International Trade and Industry.
81. lappuse - Institute for Medical and Dental Engineering, Tokyo Medical and Dental University, 2-3-10...
113. lappuse - Dept. of Physical Electronics, Tokyo Institute of Technology 2-12-1 Oh-okayama, Meguro-ku, Tokyo 152, Japan. ABSTRACT A novel technique has been proposed for selective and in-situ excimer-laser crystallization and doping to thin poly-Si films.
13. lappuse - A design method in which appropriate levels of structural reliability are provided, on a structural element (member) basis, by the specification of a number of partial safety factors related to some pre-defined characteristic values of the basic variables. Characteristic values are given as functions of mean values, coefficients of variation and distribution types.
i. lappuse - FORM 1473, 84 MAR 83 APR edition may be used until exhausted All other editions are obsolete SECURITY CLASSIFICATION OF THIS PAGE Unclassified FIELD Unclassified IICUNITV CLAMIPICATION or THIS 6a.