Emerging Semiconductor Technology: A SymposiumDinesh C. Gupta, Paul H. Langer ASTM International, 1987 - 704 lappuses |
Saturs
Introduction | 3 |
Partners in the Late 1980s | 7 |
ASTM and Semi Standards for the Semiconductor Industry | 15 |
Low Temperature and Low Pressure Silicon Epitaxy by PlasmaEnhanced CVD | 20 |
Thin Silicon Epitaxial Films Deposited at Low Temperatures | 24 |
Thin Epitaxial Silicon by CVD | 33 |
Effects of Gettering on Epi Quality for CMOS Technology | 51 |
Silicon Epitaxial Growth on N+ Substrate for CMOS Products | 65 |
Effect of Bulk Defects in Silicon on SiO2 Film Breakdown | 336 |
Free Carrier Absorption and Interstitial Oxygen Measurements | 353 |
High Reliability Infrared Measurements of Oxygen and Carbon in Silicon | 365 |
Nature of ProcessInduced SiSiO2 Defects and Their Interaction with Illumination | 379 |
A Strategy for Reducing Variability in a Production Semiconductor Fabrication Area Using the Generation of System Moments Method | 393 |
Computerized Yield Modeling | 404 |
Particle and Material Control Automation System for VLSI Manufacturing | 414 |
Semiconductor Yield Enhancement through Particle Control | 423 |
Characterization of the in Situ HCL Etch for Epitaxial Silicon | 79 |
Doped Oxide SpinOn Source Diffusion | 95 |
Effect of a Shallow Xenon Implantation on a Profile Measured by Spreading Resistance | 108 |
Measurements of CrossContamination Levels Produced by Ion Implanters | 119 |
Some Aspects of Productivity of a Low Pressure CVD Reactor | 129 |
Deposition and Properties of UltraThin High Dielectric Constant Insulators | 137 |
The Electrical Properties of MOS Transistors Fabricated with Direct Ion Beam Nitridation | 150 |
Rie Damage and Its Control in Silicon Processing | 163 |
The Bonding Structure and Compositional Analysis of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Silicon Dielectric Films | 173 |
Monte Carlo Simulation of Plasma Etch Emission Endpoint | 190 |
Profile Control of Plasma Etched Polysilicon Using Implant Doping | 204 |
The Effects of Plasma Processing of Dielectric Layers on Gallium Arsenide Integrated Circuits | 220 |
H | 241 |
Effects of Deep UV Radiation on Photoresist in Al Etch | 250 |
Influence of XRay Exposure Conditions on Pattern Quality | 257 |
Palladium Silicide Contact Process Development for VLSI | 266 |
Characterization of Silicon Surface Defects by the Laser Scanning Technique | 280 |
Damage Aspects of IngottoWafer Processing | 297 |
Hydrogen in Silicon and Generation of Haze on Silicon Surface in Aging | 313 |
Identifying Gettered Impurities in Silicon by Lima Analysis | 324 |
Particulate Control in VLSI Gases | 436 |
Spreading Resistance Measurements an Overview | 453 |
Some Aspects of Spreading Resistance Profile Analysis | 480 |
a Comparison of Sampling Volume Correction Factors in High Resolution Quantitative Spreading Resistance | 502 |
Comparison of Impurity Profiles Generated by Spreading Resistance Probe and Secondary Ion Mass Spectrometry | 521 |
Monte Carlo Calculation of Primary Kinematic KnockOn in Sims | 535 |
Spreading Resistance and Electrochemical CV | 558 |
Analysis of Boron Profiles as Determined by Secondary Ion Mass Spectrometry Spreading Resistance and Process Modeling | 573 |
Mapping Silicon Wafers by Spreading Resistance | 586 |
Production Monitoring of 200MM Wafer Processing | 598 |
Applications of XRay Fluorescence Analysis to the Thin Layer on Silicon Wafers | 615 |
Qualification of GaAs and AlGaAs by Optical and Surface Analysis Techniques | 628 |
Wafer Fab Automation an Integral Part of the CAM Environment | 653 |
the Realities and Hidden Costs of Automation | 662 |
Industry Considerations in Determining Equipment Reliability | 673 |
Workshop and Panel Discussions | 683 |
Graduate Education for the Electronics Industry | 691 |
| 695 | |
| 703 | |
Citi izdevumi - Skatīt visu
Emerging Semiconductor Technology: A Symposium Dinesh C. Gupta,Paul H. Langer Ierobežota priekšskatīšana - 1987 |
Emerging Semiconductor Technology: A Symposium Sponsored by ASTM Committee F ... Dinesh C. Gupta Priekšskatījums nav pieejams - 1987 |
Emerging Semiconductor Technology: A Symposium Dinesh C. Gupta,Paul H. Langer Priekšskatījums nav pieejams - 1987 |
Bieži izmantoti vārdi un frāzes
absorption AlGaAs algorithm analysis annealing arsenic ASTM International ASTM International www.astm.org ASTM STP 960 atomic automation beam bevel boron breakdown calculated carrier concentration chemical chemical vapor deposition cleaning coefficient contamination correction factor defects density deposition determined device diameter diffusion distribution dopant doped effect electrical Electrochemical Society electron energy epitaxial layer equation etch rate Figure GaAs gettering hydrogen impurity integral interface ion implantation junction depth laser LPCVD method obtained oxide oxygen oxygen content p-type palladium palladium silicide parameters particle peak PECVD photoluminescence photoresist plasma polysilicon probe range reactor resistance measurements resistivity profile samples scanner sheet resistance shown shows silicide silicon dioxide silicon nitride silicon wafers SIMS simulation Society for Testing spreading resistance sputtering sputtering yield standard structure substrate surface Table technique temperature Testing and Materials thermal thin values VLSI voltage X-ray yield