Silicon Nitride and Silicon Dioxide Thin Insulating Films: Proceedings of the ... International SymposiumElectrochemical Society., 1999 |
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angle anode Appl as-deposited atoms bonds breakdown capacitors centers characterization charge pumping chemical chemical vapor deposition cm² concentration profile dangling orbital decreases defects depth profiles deuterium dielectric film diffusion effect electric field Electrochem Electron Devices electron fluence ellipsometry energy etch rate experimental Faraday cage Figure films deposited furnace gas-phase gate dielectric gate oxide hydrogen hydrophilic IEEE IEEE Trans increase injection interface trap density leakage current Lett measured MOSFETs MV/cm n+ poly-Si N₂ N2O anneal N₂O plasma nitrogen nm thick O₂ observed obtained organic contaminants oxide thickness oxygen oxynitride oxynitride film parameters peak PECVD Phys poly-Si polysilicon redeposition reliability RTCVD oxynitride samples sccm Semiconductor shown in Fig Si-SiO2 interface silicon dioxide silicon nitride silicon oxynitride SIMS SiO2 spectra spectroscopy sputtering suboxide substrate surface technique temperature thermal oxide trap concentration tunnel current wafers waveguide zone
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