Proceedings of the Tenth Symposium on Plasma Processing

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The Electrochemical Society, 1994 - 606 lappuses

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544. lappuse - This work was supported by grants from the Natural Sciences and Engineering Research Council of Canada (NSERC) and the Queen's University.
120. lappuse - Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark. NJ 07102. USA GRAHAM C GOODWIN Department of Electrical and Computer Engineering University of Newcastle New South Wales.
578. lappuse - X-ray diffraction analysis and reflection electron diffraction measurements were performed at the Super Clean Room of the Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University.
96. lappuse - Sciences, and in part under the auspices of the US Department of Energy at the Lawrence Livermore National Laboratory under contract No.
536. lappuse - Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada...
12. lappuse - MA Lieberman and RA Gottscho, Design of High Density Plasma Sources for Materials Processing, in Physics of Thin Films, M.
163. lappuse - With the continued decrease in gate oxide thickness to improve MOS device performance, damage due to gate charging has been showing up after various plasma processing steps with etching and ashing being of most concern [1].
269. lappuse - Ion Bombardment Modification of Surfaces: Fundamentals and Applications, edited by O. Auciello and R. Kelly (Elsevier, Amsterdam, 1984), p. 27. 34. R. Kelly, in Jon Bombardment Modification of Surfaces: Fundamentals and Applications, edited by O.
133. lappuse - Ar ions in a liquid nitrogen cooled stage. Microscopy was performed using a Philips 420T STEM at 120 keV and a JEOL 2010 TEM at 200 keV. Surface morphology evaluations were obtained via bright field and lattice imaging techniques. Crystal damage studies were obtained via centered weak beam dark field (g = 220) techniques.
77. lappuse - Shuh, V. Chakarian, TD Durbin, PR Varekamp and JA Yarmoff, Phys. Rev. B 47 (1993) [540] DJD Sullivan, HC Flaum and AC Kummel, J.

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