Proceedings of the Tenth Symposium on Plasma ProcessingThe Electrochemical Society, 1994 - 606 lappuses |
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Bieži izmantoti vārdi un frāzes
addition angular atoms beam bias calculated caused chamber changes characteristics charge chemical chemistry chlorine collisions compared concentration constant corrosion damage decrease defect density dependence deposition determine developed device dielectric distribution edge effect electrical electrode electron emission energy etch process etch rate experimental experiments field Figure film flow flow rate flux frequency function gate oxide higher improved increase indicates layer levels lines loss lower material measured mechanism metal mode mTorr neutral observed obtained overetch oxygen parameters particle pattern performed photoresist plasma polysilicon positive potential pressure production pump range ratio reaction reactor reduced removal resist rf power sample sccm selectivity sheath shown in Fig shows silicon simulation SiO2 spacer species sputtering step structures substrate surface temperature thermal thickness tungsten uniformity voltage wafer wall yield
Populāri fragmenti
544. lappuse - This work was supported by grants from the Natural Sciences and Engineering Research Council of Canada (NSERC) and the Queen's University.
120. lappuse - Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark. NJ 07102. USA GRAHAM C GOODWIN Department of Electrical and Computer Engineering University of Newcastle New South Wales.
578. lappuse - X-ray diffraction analysis and reflection electron diffraction measurements were performed at the Super Clean Room of the Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University.
96. lappuse - Sciences, and in part under the auspices of the US Department of Energy at the Lawrence Livermore National Laboratory under contract No.
536. lappuse - Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada...
12. lappuse - MA Lieberman and RA Gottscho, Design of High Density Plasma Sources for Materials Processing, in Physics of Thin Films, M.
163. lappuse - With the continued decrease in gate oxide thickness to improve MOS device performance, damage due to gate charging has been showing up after various plasma processing steps with etching and ashing being of most concern [1].
269. lappuse - Ion Bombardment Modification of Surfaces: Fundamentals and Applications, edited by O. Auciello and R. Kelly (Elsevier, Amsterdam, 1984), p. 27. 34. R. Kelly, in Jon Bombardment Modification of Surfaces: Fundamentals and Applications, edited by O.
133. lappuse - Ar ions in a liquid nitrogen cooled stage. Microscopy was performed using a Philips 420T STEM at 120 keV and a JEOL 2010 TEM at 200 keV. Surface morphology evaluations were obtained via bright field and lattice imaging techniques. Crystal damage studies were obtained via centered weak beam dark field (g = 220) techniques.
77. lappuse - Shuh, V. Chakarian, TD Durbin, PR Varekamp and JA Yarmoff, Phys. Rev. B 47 (1993) [540] DJD Sullivan, HC Flaum and AC Kummel, J.