Chemical Mechanical Planarization VI: Proceedings of the International Symposium

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The Electrochemical Society, 2003 - 358 lappuses

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122. lappuse - I -2005-000- 1 0989-0 from the Basic Research Program of the Korea Science & Engineering Foundation References [1] Yaszemski MJ, Payne RG, Hayes WC, Langer R, and Mikos AG., Biomaterials.
83. lappuse - ACKNOWLEDGEMENTS This material is based upon work supported in part by the STC Program of the National Science Foundation under Agreement no.
337. lappuse - Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA...
339. lappuse - R is the universal gas constant, T is the absolute temperature, and A' is a collision factor that must have the dimensions of a frequency.
22. lappuse - Forces between the tip and the sample surface cause the cantilever to bend or deflect. A detector...
261. lappuse - REFERENCES 1. JM Steigerwald, SP Murarka and RJ Gutmann, Chemical Mechanical Planarization of Microelectronic Materials, John Wiley and Sons, New York ( 1 997) 2.
217. lappuse - The authors would like to acknowledge the financial support of the Engineering Research Center (ERC) for Particle Science and Technology at the University of Florida, the National Science Foundation (NSF) grant # EEC-94-02989, and the Industrial Partners of the ERC.
30. lappuse - Potentiodynamic polarization tests were performed using EG&G Princeton Applied Research model 273 potentiostat/galvanostat. A standard three-electrode corrosion flat cell was used. A platinum foil was used as the counter electrode and saturated calomel electrode was used as the reference electrode.
78. lappuse - NC 27695-79 16 ***Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill. NC 27599-3290 Abstract PolySi films deposited with and without oxygen doping using rapid thermal chemical vapor deposition (RTCVD) have been investigated.
315. lappuse - Engineering Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge, MA...

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