Organic and Inorganic NanostructuresArtech House, 2005 - 268 lappuses The fast-growing world of nanotechnology promises to revolutionize microelectronics and optoelectronics with the production and application of materials, devices and systems at nanoscale (1 to 100 billionth of a meter). This book provides professionals and researchers with a comprehensive and up-to-date understanding of organic and inorganic nanostructures - materials formed by chemical routes that engineers can use to build a wide range of electronic devices and sensors. Practitioners gain insight into the selection and optimization of nanostructures for specific applications and the development of novel nanoelectronic and sensing devices. Moreover, the book provides a thorough overview of the most important research in the field, presents experimental methods of studying nanostructures and nanostructured materials, and offers a look at the future direction of nanoelectronics. |
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1.–3. rezultāts no 32.
4. lappuse
... resonance tunneling devices ( RTD ) , will become more common . The operational speed of novel quantum devices and the novel principles of computer architecture are the subjects of discussion in the next section . 1.3 Quantum ...
... resonance tunneling devices ( RTD ) , will become more common . The operational speed of novel quantum devices and the novel principles of computer architecture are the subjects of discussion in the next section . 1.3 Quantum ...
130. lappuse
... Resonance Studies on Langmuir - Blodgett Films of Novel Octa - Substituted Metal - Free Phthalocyanine Molecules , " Phil . Mag . B , Vol . 76 , No. 6 , 1997 , pp . 961-971 . [ 16 ] Vukusic , P. S. , J. R. Sambles , and J. D. Write ...
... Resonance Studies on Langmuir - Blodgett Films of Novel Octa - Substituted Metal - Free Phthalocyanine Molecules , " Phil . Mag . B , Vol . 76 , No. 6 , 1997 , pp . 961-971 . [ 16 ] Vukusic , P. S. , J. R. Sambles , and J. D. Write ...
152. lappuse
... resonance tunneling barrier , and ( b ) I - V characteristic of this junction , with each peak corresponding to energy matching conditions eV = E ,, i = 1 , 2 , 3 . The resulting I - V characteristics in Figure 5.16 show peaks ...
... resonance tunneling barrier , and ( b ) I - V characteristic of this junction , with each peak corresponding to energy matching conditions eV = E ,, i = 1 , 2 , 3 . The resulting I - V characteristics in Figure 5.16 show peaks ...
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acid adsorbed adsorption amphiphilic anti-IgG Appl applications atomic barrier beam biosensors calixarene CdS clusters CdS nanoparticles charged Chem chemical colloid Composite concentration Conducting Polymers dependence devices diffraction Dye-Sensitized Solar Cells electrical electrochemical electrodeposition electrolyte electron tunneling ellipsometry energy enzyme evaporation exciton experimental film thickness formation of CdS II-VI impurities inorganic interface Langmuir Langmuir-Blodgett Films Layer-by-Layer layers LB films Lett luminescence measurements membrane metal method microelectronics microscopy molecular monolayer Multilayer Nabok nano nanoclusters nanometers nanoparticles nanostructured nanostructured materials organic films oxide parameters particles Phthalocyanine Phys Plasmon polarization polycation Polyelectrolyte polyion proteins Quantum Dots range reactions refractive index Reprinted with permission resonance sample scanning Self-Assembled semiconductor nanoparticles sensitive Sensors shown in Figure silicon Single-Electron sol-gel Solar Cells solid-state solution spectra Spectroscopy spin coating SPR curves structure substrate superlattices Surface Plasmon Resonance technique temperature thin films Thin Solid Films tion transducer transistors two-dimensional typical voltage