Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound SemiconductorsH. Q. Hou, Electrochemical Society. Luminescence and Display Materials Division, Electrochemical Society. Meeting The Electrochemical Society, 1998 - 641 lappuses |
Saturs
| 10 | |
| 29 | |
| 51 | |
| 68 | |
| 87 | |
| 110 | |
| 119 | |
| 136 | |
| 377 | |
| 385 | |
| 392 | |
| 400 | |
| 410 | |
| 417 | |
| 434 | |
| 443 | |
| 154 | |
| 164 | |
| 188 | |
| 196 | |
| 203 | |
| 210 | |
| 240 | |
| 249 | |
| 265 | |
| 279 | |
| 289 | |
| 305 | |
| 311 | |
| 320 | |
| 333 | |
| 351 | |
| 359 | |
| 366 | |
| 450 | |
| 455 | |
| 461 | |
| 468 | |
| 479 | |
| 501 | |
| 513 | |
| 520 | |
| 528 | |
| 534 | |
| 548 | |
| 555 | |
| 564 | |
| 587 | |
| 607 | |
| 623 | |
| 636 | |
Bieži izmantoti vārdi un frāzes
active annealing Appl applications atomic band bias breakdown calculated carrier characteristics charge compared concentration crystal decreases defects density dependence deposition determined device diffusion diode doped effect efficiency electric electron emission energy enhanced epitaxial etch fabricated field Figure films formed frequency function GaAs gain gate grating grown growth higher hole hydrogen IEEE implantation increase indicates intensity interface laser layer Lett light lower material measured mechanism metal nitride noise observed obtained operation optical oxide parameters peak performance phase Phys plasma position present properties quantum range reduced reflectance region reported resistance respectively sample semiconductor shift shown shown in Fig shows signal silicon single spectra step structure studied substrate surface technique temperature thermal thickness thin typical values voltage wavelength
Populāri fragmenti
526. lappuse - This work was supported by the National Science Council of the Republic of China under Contract No.
372. lappuse - Laboratory, and Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720 (USA) Reprinted with permission from Materials Science and Engineering, A 103/1 (1988), pp. 15-28. Abstract Crack tip shielding phenomena, whereby the "effective crack-driving force...
208. lappuse - Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy.
87. lappuse - Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia LV DAO and M.
523. lappuse - Therefore, growth techniques such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) must be employed in which one has precise control of the layer thickness at the sub-micron level.
523. lappuse - Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, TAIWAN, Republic of China...
196. lappuse - Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla CA 92093-0407, (email: {Under , zeger}«code . ucsd.edu).
195. lappuse - M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki and Y. Yazawa, Jpn J. Appl. Phys., 35, pp.
494. lappuse - References [1] SM Sze Physics of Semiconductor Devices , 2nd ed., Wiley (New York) 1983, [2] P. Hesto "The Nature of Electronic Conduction in Thin Insulating Layers
152. lappuse - This work was financially supported by the Swedish Research Council for Engineering Sciences (TFR) and the Swedish National Board for Industrial and Technological Development (NUTEK).