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" Z. Ma, P. Moon, P. Nguyen, L. Rumaner, R. Schweinfurth, S. Sivakumar, M. Stettler, S. Thompson, B. Tufts, J. Xu, S. Yang, and M. Bohr, "A 130 nm generation logic technology featuring 70 nm transistors, dual Vt transistors and 6 layers ofCu interconnects "
Leakage in Nanometer CMOS Technologies - 42. lappuse
laboja - 2006 - 308 lapas
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Rapid Thermal and Other Short-time Processing Technologies II: Proceedings ...

Dim-Lee Kwong, Electrochemical Society. Electronics Division, Electrochemical Society. High Temperature Materials Divisions - 2001 - 438 lapas
...groups in Logic Technology Development organization for their support. REFERENCES 1- S. Tyagi et al., "A 130 nm Generation Logic Technology Featuring 70...Vt Transistors and 6 layers of Cu Interconnects", IEDM 2000. 2- T. Ghani et al., "l00nm Gate Length High Performance/Low Power CMOS Transistor structure",...
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Handbook of Semiconductor Manufacturing Technology

Yoshio Nishi, Robert Doering - 2017 - 1720 lapas
...563-6. 17. Tyagi, S., M. Alavi, R. Bigwood, T. Bramblett, J. Brandenburg, W. Chen, B. Crew, et al. "A 130 nm Generation Logic Technology Featuring 70...Transistors, Dual VT Transistors and. 6 layers of interconnects." Tech. Dig. IEEE Int. Interconnect Tech. Conf. (2000): 567-70. 18. Perera, A., B. Smith,...
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