Leakage in Nanometer CMOS TechnologiesSiva G. Narendra, Anantha P. Chandrakasan Springer Science & Business Media, 2006. gada 10. marts - 308 lappuses Scaling transistors into the nanometer regime has resulted in a dramatic increase in MOS leakage (i.e., off-state) current. Threshold voltages of transistors have scaled to maintain performance at reduced power supply voltages. Leakage current has become a major portion of the total power consumption, and in many scaled technologies leakage contributes 30-50% of the overall power consumption under nominal operating conditions. Leakage is important in a variety of different contexts. For example, in desktop applications, active leakage power (i.e., leakage power when the processor is computing) is becoming significant compared to switching power. In battery operated systems, standby leakage (i.e., leakage when the processor clock is turned off) dominates as energy is drawn over long idle periods. Increased transistor leakages not only impact the overall power consumed by a CMOS system, but also reduce the margins available for design due to the strong relationship between process variation and leakage power. It is essential for circuit and system designers to understand the components of leakage, sensitivity of leakage to different design parameters, and leakage mitigation techniques in nanometer technologies. This book provides an in-depth treatment of these issues for researchers and product designers. |
No grāmatas satura
1.5. rezultāts no 10.
9. lappuse
However, when the channel length is reduced the barrier for the majority carriers
to enter the channel also is reduced as ... sub-threshold leakage currents, apart
from the increase in sub-threshold leakage due to Vt reduction required with ...
However, when the channel length is reduced the barrier for the majority carriers
to enter the channel also is reduced as ... sub-threshold leakage currents, apart
from the increase in sub-threshold leakage due to Vt reduction required with ...
13. lappuse
Therefore, there is no one solution that will transcend all the negative effects of
the transistor leakage sources. The solution space spans the transistor, circuit,
and system levels. They can be further divided in to (i) reduction and adaptation ...
Therefore, there is no one solution that will transcend all the negative effects of
the transistor leakage sources. The solution space spans the transistor, circuit,
and system levels. They can be further divided in to (i) reduction and adaptation ...
22. lappuse
The scaling nature of the stack effect leakage reduction factor is also discussed.
The derived model for leakage reduction depends on fundamental transistor
parameter. This makes the model viable to predict potential leakage savings
using ...
The scaling nature of the stack effect leakage reduction factor is also discussed.
The derived model for leakage reduction depends on fundamental transistor
parameter. This makes the model viable to predict potential leakage savings
using ...
30. lappuse
2.3 LEAKAGE REDUCTION USING NATURAL STACKS Typically, a large circuit
block contains a significant number of logic gates where transistor stacks are
already present, like the PMOS stack in NOR or NMOS stack in NAND gates.
2.3 LEAKAGE REDUCTION USING NATURAL STACKS Typically, a large circuit
block contains a significant number of logic gates where transistor stacks are
already present, like the PMOS stack in NOR or NMOS stack in NAND gates.
38. lappuse
Esat sasniedzis šīs grāmatas aplūkošanas reižu limitu.
Esat sasniedzis šīs grāmatas aplūkošanas reižu limitu.
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Saturs
Chapter 6 | 141 |
Chapter 7 | 163 |
Chapter 8 | 200 |
L | 209 |
Chapter 9 | 211 |
Chapter 10 | 234 |
VVV0xW+2+ 20 1 | 236 |
Periphery | 254 |
Chapter 4 | 77 |
11 | 81 |
Vdd I t I | 96 |
botas bbarabosse cseldk14keyb long sandsly | 102 |
Chapter 5 | 105 |
6 | 108 |
aget | 121 |
Chapter 11 | 257 |
i | 269 |
i | 274 |
Chapter 12 | 281 |
B | 291 |
Figure 129 Carbon nanotube structures | 298 |
Citi izdevumi - Skatīt visu
Leakage in Nanometer CMOS Technologies Siva G. Narendra,Anantha P. Chandrakasan Ierobežota priekšskatīšana - 2006 |
Leakage in Nanometer CMOS Technologies Siva G. Narendra,Anantha P. Chandrakasan Priekšskatījums nav pieejams - 2005 |
Leakage in Nanometer CMOS Technologies Siva G. Narendra,Anantha P. Chandrakasan Priekšskatījums nav pieejams - 2010 |
Bieži izmantoti vārdi un frāzes
active leakage active mode applied biasing burn-in capacitance channel length circuit blocks clock gating CMOS CMOS circuits critical path defective delay diode drain DRAM Drowsy mode dynamic dynamic voltage scaling Electronics flip-flop FMAx frequency gate leakage gating transistors high Vt high-speed IDDQ IEEE impact implementation increase junction leakage current leakage power leakage reduction logic logic gates Low Power lower microprocessor MOSFET MT cells MTCMOS NMOS NMOS transistors node on-chip operation output oxide thickness performance PMOS power gating transistors power supply power switch processor reduce leakage reverse body bias salicide scheme shown in Figure signal silicon sleep devices sleep transistor Solid-State Circuits SRAM SRAM cell stack effect standby leakage standby mode standby power sub-threshold current substrate supply voltage technique technology scaling temperature threshold voltage tunneling VLSI voltage scaling
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Atsauces uz šo grāmatu
Low Power Methodology Manual: For System-on-Chip Design David Flynn,Rob Aitken,Alan Gibbons,Kaijian Shi Ierobežota priekšskatīšana - 2007 |
Digital Integrated Circuit Design: From VLSI Architectures to CMOS Fabrication Hubert Kaeslin Ierobežota priekšskatīšana - 2008 |
Bibliogrāfiskā informācija
| Nosaukums | Leakage in Nanometer CMOS Technologies Integrated Circuits and Systems |
| Redaktori | Siva G. Narendra, Anantha P. Chandrakasan |
| Izdevums: | ilustrēts |
| Izdevējs | Springer Science & Business Media, 2006 |
| ISBN | 0387281339, 9780387281339 |
| Apjoms | 308 lappuses |
| Eksportēt avotu | BiBTeX EndNote RefMan |