Leakage in Nanometer CMOS TechnologiesSiva G. Narendra, Anantha P. Chandrakasan Springer Science & Business Media, 2006. gada 10. marts - 308 lappuses Scaling transistors into the nanometer regime has resulted in a dramatic increase in MOS leakage (i.e., off-state) current. Threshold voltages of transistors have scaled to maintain performance at reduced power supply voltages. Leakage current has become a major portion of the total power consumption, and in many scaled technologies leakage contributes 30-50% of the overall power consumption under nominal operating conditions. Leakage is important in a variety of different contexts. For example, in desktop applications, active leakage power (i.e., leakage power when the processor is computing) is becoming significant compared to switching power. In battery operated systems, standby leakage (i.e., leakage when the processor clock is turned off) dominates as energy is drawn over long idle periods. Increased transistor leakages not only impact the overall power consumed by a CMOS system, but also reduce the margins available for design due to the strong relationship between process variation and leakage power. It is essential for circuit and system designers to understand the components of leakage, sensitivity of leakage to different design parameters, and leakage mitigation techniques in nanometer technologies. This book provides an in-depth treatment of these issues for researchers and product designers. |
No grāmatas satura
1.5. rezultāts no 8.
9. lappuse
... with technology scaling. Long Channel Short Channel. | ..........Barrier height......
....... Vds? Figure I-7: Barrier height lowering due to channel length reduction and
drain voltage increase in an NMOS field-effect transistor. It is important to ...
... with technology scaling. Long Channel Short Channel. | ..........Barrier height......
....... Vds? Figure I-7: Barrier height lowering due to channel length reduction and
drain voltage increase in an NMOS field-effect transistor. It is important to ...
15. lappuse
w, I# *h Lig leak-u T off-p * off-n k, k, I where, I", and I", are the worst-case leakage
current per unit width of PMOS and NMOS transistors. The worst-case leakage
current is obtained for transistors with threshold voltage or channel length 3 or ...
w, I# *h Lig leak-u T off-p * off-n k, k, I where, I", and I", are the worst-case leakage
current per unit width of PMOS and NMOS transistors. The worst-case leakage
current is obtained for transistors with threshold voltage or channel length 3 or ...
22. lappuse
In this chapter after the introduction of stack effect, we will review a new standby
leakage control scheme which exploits the large reduction in leakage current
achievable by simultaneously turning OFF more than one transistor in NMOS or ...
In this chapter after the introduction of stack effect, we will review a new standby
leakage control scheme which exploits the large reduction in leakage current
achievable by simultaneously turning OFF more than one transistor in NMOS or ...
31. lappuse
For 3- or 4-transistor stacks, the leakage reduction is found to be 23X larger in
both NMOS and PMOS, as illustrated in Figure 2-10. NMOS High Vt 50 70 90 110
Temperature 3 0 Figure 2-9. Leakage reduction in 2 NMOS and 2 PMOS stacks
at ...
For 3- or 4-transistor stacks, the leakage reduction is found to be 23X larger in
both NMOS and PMOS, as illustrated in Figure 2-10. NMOS High Vt 50 70 90 110
Temperature 3 0 Figure 2-9. Leakage reduction in 2 NMOS and 2 PMOS stacks
at ...
43. lappuse
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Saturs
Chapter 6 | 141 |
Chapter 7 | 163 |
Chapter 8 | 200 |
L | 209 |
Chapter 9 | 211 |
Chapter 10 | 234 |
VVV0xW+2+ 20 1 | 236 |
Periphery | 254 |
Chapter 4 | 77 |
11 | 81 |
Vdd I t I | 96 |
botas bbarabosse cseldk14keyb long sandsly | 102 |
Chapter 5 | 105 |
6 | 108 |
aget | 121 |
Chapter 11 | 257 |
i | 269 |
i | 274 |
Chapter 12 | 281 |
B | 291 |
Figure 129 Carbon nanotube structures | 298 |
Citi izdevumi - Skatīt visu
Leakage in Nanometer CMOS Technologies Siva G. Narendra,Anantha P. Chandrakasan Ierobežota priekšskatīšana - 2006 |
Leakage in Nanometer CMOS Technologies Siva G. Narendra,Anantha P. Chandrakasan Priekšskatījums nav pieejams - 2005 |
Leakage in Nanometer CMOS Technologies Siva G. Narendra,Anantha P. Chandrakasan Priekšskatījums nav pieejams - 2010 |
Bieži izmantoti vārdi un frāzes
active leakage active mode applied biasing burn-in capacitance channel length circuit blocks clock gating CMOS CMOS circuits critical path defective delay diode drain DRAM Drowsy mode dynamic dynamic voltage scaling Electronics flip-flop FMAx frequency gate leakage gating transistors high Vt high-speed IDDQ IEEE impact implementation increase junction leakage current leakage power leakage reduction logic logic gates Low Power lower microprocessor MOSFET MT cells MTCMOS NMOS NMOS transistors node on-chip operation output oxide thickness performance PMOS power gating transistors power supply power switch processor reduce leakage reverse body bias salicide scheme shown in Figure signal silicon sleep devices sleep transistor Solid-State Circuits SRAM SRAM cell stack effect standby leakage standby mode standby power sub-threshold current substrate supply voltage technique technology scaling temperature threshold voltage tunneling VLSI voltage scaling
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Atsauces uz šo grāmatu
Low Power Methodology Manual: For System-on-Chip Design David Flynn,Rob Aitken,Alan Gibbons,Kaijian Shi Ierobežota priekšskatīšana - 2007 |
Digital Integrated Circuit Design: From VLSI Architectures to CMOS Fabrication Hubert Kaeslin Ierobežota priekšskatīšana - 2008 |
Bibliogrāfiskā informācija
| Nosaukums | Leakage in Nanometer CMOS Technologies Integrated Circuits and Systems |
| Redaktori | Siva G. Narendra, Anantha P. Chandrakasan |
| Izdevums: | ilustrēts |
| Izdevējs | Springer Science & Business Media, 2006 |
| ISBN | 0387281339, 9780387281339 |
| Apjoms | 308 lappuses |
| Eksportēt avotu | BiBTeX EndNote RefMan |