 | Electrochemical Society. Electronics Division - 1994 - 622 lapas
...12, 494 (1994). [12] D. Rapp and WE Francis, J. Chem. Phys. 37, 2631 (1962). W. Zhong and D. Misra Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 RA. Bartynski Department of Physics, Rutgers University, Piscataway, NJ 08855 V. Pat el and... | |
 | Ali N. Akansu, Mark J.T. Smith - 1995 - 476 lapas
...FUNDAMENTALS AND OPTIMAL DESIGN OF SUBBAND AND WAVELET TRANSFORMS AH N. Akansu and Richard A. Haddad* Department of Electrical and Computer Engineering,...Jersey Institute of Technology, Newark, New Jersey *School of Electrical Engineering and Computer Science Polytechnic University, Brooklyn, New York 1... | |
 | L. S. Davis - 1996 - 260 lapas
...ANALYSIS ON REDUCED HYPERCUBE (RH) PARALLEL COMPUTERS* SOTIRIOS G. ZIAVRAS and MICHALIS A. SIDERAS Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark, NJ 07102, USA E-mail: ziavrasOhertz.njit.edu The direct binary hypercube interconnection network has... | |
 | Electrochemical Society. Dielectric Science and Technology Division - 1996 - 740 lapas
...15. SMMyers, DMFollstaedt, HJStein. and WRWampler, Phys.Rev.B, 45, 3914(1992) PK Swain and D. Misra Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark, NJ 07 102- 1982 ABSTRACT: Reactive ion etching, the most promising technique required to transform... | |
 | William S. Levine - 1996 - 1580 lapas
...Electrical Engineering & Computer Science, University of Michigan, Ann Arbor, MI Bernard Friedland Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ TT Georgiou Department of Electrical Engineering, University of Minnesota James T. Gillis The Aerospace... | |
 | G. S. Mathad, D. Misra, K. B. Sundaram - 1998 - 308 lapas
...Transfer Management Siemens Microelectronics, Inc. Fishkill, New York USA Assistant Editors D. Misra Department of Electrical and Computer Engineering...Jersey Institute of Technology Newark, New Jersey USA KB Sundaram Department of Electrical Engineering University of Central Florida Orlando, Florida... | |
 | G. S. Mathad, D. Misra, K. B. Sundaram - 1998 - 308 lapas
...Transfer Management Siemens Microelectronics, Inc. Fishkill, New York USA Assistant Editors D. Misra Department of Electrical and Computer Engineering...Jersey Institute of Technology Newark, New Jersey USA KB Sundaram Department of Electrical Engineering University of Central Florida Orlando, Florida... | |
 | K. B. Sundaram, M. J. Deen, W. D. Brown - 1999 - 300 lapas
...cages. The process condition: pressure = 5 mTorr, bias voltage = 800 volt. 269 D Misra and S. Kishore Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark, NJ 07 1 02- 1 982 ABSTRACT Thin oxides (4-nm) grown on deuterium implanted silicon substrates (D2 1/1... | |
 | 1999 - 306 lapas
...voltage = 800 volt. GATE OXIDES GROWN ON DEUTERIUM IMPLANTED SILICON SUBSTRATE D. Misra and S. Kishoret Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark, NJ 07 102- 1982 ABSTRACT Thin oxides (4-nm) grown on deuterium implanted silicon substrates (D2 I/I... | |
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Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark. NJ 07102. USA GRAHAM C GOODWIN Department of Electrical and Computer Engineering University of Newcastle New South Wales. 
