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" Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark. NJ 07102. USA GRAHAM C GOODWIN Department of Electrical and Computer Engineering University of Newcastle New South Wales. "
Interconnection Networks and Mapping and Scheduling Parallel Computations ... - 325. lappuse
laboja - 1995 - 342 lapas
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Proceedings of the Tenth Symposium on Plasma Processing

Electrochemical Society. Electronics Division - 1994 - 606 lapas
...12, 494 (1994). [12] D. Rapp and WE Francis, J. Chem. Phys. 37, 2631 (1962). W. Zhong and D. Misra Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 RA. Bartynski Department of Physics, Rutgers University, Piscataway, NJ 08855 V. Pat el and...
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Subband and Wavelet Transforms: Design and Applications

Ali N. Akansu, Mark J.T. Smith - 1995 - 452 lapas
...FUNDAMENTALS AND OPTIMAL DESIGN OF SUBBAND AND WAVELET TRANSFORMS AH N. Akansu and Richard A. Haddad* Department of Electrical and Computer Engineering,...Jersey Institute of Technology, Newark, New Jersey *School of Electrical Engineering and Computer Science Polytechnic University, Brooklyn, New York 1...
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Parallel Image Analysis: Theory and Applications, 1. sējums

L. S. Davis - 1996 - 246 lapas
...ANALYSIS ON REDUCED HYPERCUBE (RH) PARALLEL COMPUTERS* SOTIRIOS G. ZIAVRAS and MICHALIS A. SIDERAS Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark, NJ 07102, USA E-mail: ziavrasOhertz.njit.edu The direct binary hypercube interconnection network has...
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Proceedings of the Eleventh International Symposium on Plasma Processing

Electrochemical Society. Electronics Division - 1996 - 720 lapas
...15. SMMyers, DMFollstaedt, HJStein. and WRWampler, Phys.Rev.B, 45, 3914(1992) PK Swain and D. Misra Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark, NJ 07 102- 1982 ABSTRACT: Reactive ion etching, the most promising technique required to transform...
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The Control Handbook

William S. Levine - 1996 - 1566 lapas
...Electrical Engineering & Computer Science, University of Michigan, Ann Arbor, MI Bernard Friedland Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ TT Georgiou Department of Electrical Engineering, University of Minnesota James T. Gillis The Aerospace...
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Plasma Processing XII

G. S. Mathad, D. Misra, K. B. Sundaram - 1998 - 292 lapas
...Transfer Management Siemens Microelectronics, Inc. Fishkill, New York USA Assistant Editors D. Misra Department of Electrical and Computer Engineering...Jersey Institute of Technology Newark, New Jersey USA KB Sundaram Department of Electrical Engineering University of Central Florida Orlando, Florida...
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Plasma Processing XII

G. S. Mathad, D. Misra, K. B. Sundaram - 1998 - 292 lapas
...Transfer Management Siemens Microelectronics, Inc. Fishkill, New York USA Assistant Editors D. Misra Department of Electrical and Computer Engineering...Jersey Institute of Technology Newark, New Jersey USA KB Sundaram Department of Electrical Engineering University of Central Florida Orlando, Florida...
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Proceedings of the Symposium on Light Emitting Devices for Optoelectronic ...

Electrochemical Society. Luminescence and Display Materials Division, Electrochemical Society. Meeting - 1998 - 641 lapas
...81154,17745(1996). STRAIN RELAXATION IN SIGE DUE TO P-IMPLANTATION AND SUBSEQUENT ANNEALING. PK Swain* and D. Misra Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark, NJ 07 102-1982 t Currently at Sarnoff Corporation 201 Washington Road CN5300 Princeton 08543-5300 ABSTRACT:...
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Silicon Nitride and Silicon Dioxide Thin Insulating Films: Proceedings of ...

K. B. Sundaram, M. J. Deen, W. D. Brown - 1999 - 284 lapas
...cages. The process condition: pressure = 5 mTorr, bias voltage = 800 volt. 269 D Misra and S. Kishore Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark, NJ 07 1 02- 1 982 ABSTRACT Thin oxides (4-nm) grown on deuterium implanted silicon substrates (D2 1/1...
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Silicon Nitride and Silicon Dioxide Thin Insulating Films: Proceedings of ...

1999
...voltage = 800 volt. GATE OXIDES GROWN ON DEUTERIUM IMPLANTED SILICON SUBSTRATE D. Misra and S. Kishoret Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark, NJ 07 102- 1982 ABSTRACT Thin oxides (4-nm) grown on deuterium implanted silicon substrates (D2 I/I...
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