Silicon Nitride and Silicon Dioxide Thin Insulating Films: Proceedings of the Fifth International Symposium

amount analysis angle anneal Appl applied atoms bonds breakdown calculated centers characterization charge chemical compared concentration constant decreases defects density dependence deposited depth determined devices dielectric diffusion effect electric field Electrochem electron energy etch experimental exposure fabrication Figure films flow fluence formed function furnace gate gate dielectric gate oxide grown growth height higher IEEE implantation improved incorporation increase indicate injection interface layer leakage current Lett levels lower materials measured methods N₂O nitride nitrogen observed obtained organic contaminants oxide thickness oxygen oxynitride pattern peak performed Phys plasma position present properties reliability respectively samples shown in Fig shows silicon SIMS SiO2 SiON stress structure substrate surface technique temperature thermal thickness thin trap trap density tunnel values voltage wafers waveguide zone