Advances in Silicon Carbide Processing and ApplicationsArtech House, 2004 - 212 lappuses Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications. |
Saturs
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13 Crystalline Structure | 8 |
133 Impurities in Different Polytypes | 9 |
314 SiC ACDC Inverter Example | 79 |
32 DCAC Power Conversion | 80 |
322 Inverter Control Techniques | 81 |
323 SiC DCAC Inverter Example | 82 |
33 PulsedPower Applications | 91 |
331 Thyristor Basics | 92 |
332 Evaluation of SiC Thyristors for PulsedPower Switching | 94 |
34 Thermal Management and HighVoltage Packaging | 97 |
14 Crystal Growth | 11 |
142 High Temperature Chemical Vapor Deposition | 14 |
15 Epitaxial Growth | 18 |
16 Defects | 21 |
162 Stacking Faults | 22 |
171 HighFrequency Applications | 23 |
18 Summary | 25 |
References | 26 |
HighTemperature SiCFET Chemical Gas Sensors | 29 |
22 Detection Mechanism of FieldEffect Gas Sensors | 30 |
222 Detection of Different Molecules | 31 |
223 Influence of Oxygen | 34 |
224 Influence of Different Metals | 35 |
225 Influence of Temperature | 36 |
23 FieldEffect Chemical Gas Sensor Devices | 38 |
233 The PN Junction Diode | 43 |
234 FieldEffect Transistors | 44 |
24 Sensor Properties at Elevated Temperatures Influence of Hydrogen | 49 |
241 Influence of Hydrogen on Capacitors | 50 |
242 Influence of Hydrogen on Schottky Diodes | 51 |
25 More Sensor Properties | 53 |
252 LongTerm Stability | 56 |
26 Experimental | 57 |
263 Mounting | 58 |
27 Applications | 59 |
272 Diesel Engine Exhausts | 60 |
273 Flue Gas Monitoring | 61 |
28 Outlook and Conclusions | 62 |
Acknowledgments | 63 |
Silicon Carbide Technology and Power Electronics Applications | 69 |
311 SMPC Circuit Topologies and Operation | 70 |
312 Silicon Carbide Devices in SMPC Applications | 73 |
313 Other SiC Switches | 78 |
341 Hybrid SiSiC HalfBridge Module | 98 |
342 Implementation Analysis of a HighVoltage SiC Bridge Rectifier Module | 100 |
343 Electrostatic Analysis of a HighVoltage Package for SiC Devices | 103 |
35 Summary | 106 |
Advances in Selective Doping of SiC Via Ion Implantation | 109 |
42 AsImplanted Profiles | 114 |
422 Random Implants | 115 |
4223 Chemical Depth Profiles | 124 |
43 Implant Annealing | 128 |
432 Silane Overpressure Annealing Process | 130 |
433 Implanted Ion Profiles After Annealing | 136 |
434 Defect Evolution | 140 |
435 Results of Electrical Activation | 143 |
44 Technology Barriers and Suggestions for Future Work | 147 |
References | 148 |
Power SiC MOSFETS | 155 |
52 SiC UMOSFET | 156 |
53 SiC DIMOSFET | 163 |
54 SiC LDMOS | 169 |
55 Summary and Future Development | 171 |
References | 172 |
Power and RF BJTs in 4HSiC Device Design and Technology | 177 |
63 Design of the Epitaxial Power BJT | 181 |
632 Design of the Base Layer | 183 |
633 Design of the Unit Cell | 184 |
64 Process Integration | 186 |
65 12kV Power BJTs | 188 |
66 Design and Fabrication of UHF Transistors | 192 |
67 Future Work | 199 |
References | 200 |
About the Editors | 203 |
Index | 205 |
Citi izdevumi - Skatīt visu
Advances in Silicon Carbide Processing and Applications Stephen E. Saddow,Anant K. Agarwal Priekšskatījums nav pieejams - 2004 |
Bieži izmantoti vārdi un frāzes
4H-SiC BJTs activation ambient annealing temperature Appl applications atoms bandgap blocking voltage Boron capacitance capacitor carrier catalytic metal channel mobility chemical circuit collector common emitter conduction crystal current gain damage defects density diffusion dopants doping dose drain drift region electric field energy epilayer epitaxial emitter exciton field-effect Forum gas response gas sensors gases gate dielectric gate oxide growth high-temperature high-voltage higher hydrogen IEEE IGBT implant annealing increases insulator ion implantation junction material measured micropipes MISIC-FET MOSFETs n-type nitrogen operation oxygen p-i-n diodes p-n junction peak Phys polytypes power BJT Power Semiconductor Devices Proc profiles pulse reactor Reprinted with permission resistance samples Schottky diodes semiconductor shown in Figure shows SiC devices SiC diodes silane Silicon Carbide simulation snubber specific on-resistance structure sublattice substrate surface switching thermal thickness thyristor tion transistor turn-on turnoff wafer
Populāri fragmenti
69. lappuse - The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the Defense Advanced Research Projects Agency or the US Government.
196. lappuse - Fig. 8 shows the IV characteristics of a single epitaxial emitter cell. A maximum current gain of about 15 is obtained. This current gain is extremely sensitive to the base contact implant spacing from the edge of the emitter mesa.
191. lappuse - For example, the acceptor (Aluminum in 4H-SJC) doping of 2xl017 cm"3 is only 10% ionized at room temperature. The percent ionization increases to 50% at 200°C. This effect cancels the effect of increased minority carrier lifetime and reduces the current gain with temperature. This feature along with the positive temperature coefficient in the on-resistance reduces the possibility of a thermal runaway and makes paralleling easy for these devices.
172. lappuse - Stengl, H. Strack, J. Tihanyi and H. Weber, "A new generation of high voltage MOSFETs breaks the limit line of silicon,
196. lappuse - The most difficult step in this process is the etching of the emitter layer and stopping at the base layer. The uniformity of the RIE is critical at this step.
63. lappuse - Our research on high temperature chemical sensors based on silicon carbide is supported by grants from the Swedish National Board for Industrial and Technical Development and by a grant from the SSF-SiCEP program.
188. lappuse - Next, aluminum (27A1+) was implanted to form the base contact regions as well as the floating guard rings. The implants were electrically activated with a 1600°C, 5 min anneal in Ar.