Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned SubstratesK. Eberl, Pierre M. Petroff, Piet Demeester Springer Science & Business Media, 1995. gada 31. aug. - 386 lappuses Proceedings of the NATO Advanced Research Workshop, Ringberg in Rottach Egern, Germany, February 20--24, 1995 |
Saturs
I | vii |
II | 7 |
III | 13 |
IV | 29 |
V | 43 |
VI | 53 |
VII | 63 |
VIII | 75 |
XIX | 201 |
XX | 213 |
XXI | 223 |
XXII | 237 |
XXIII | 247 |
XXIV | 259 |
XXV | 265 |
XXVI | 277 |
IX | 87 |
X | 95 |
XI | 107 |
XII | 119 |
XIII | 133 |
XIV | 145 |
XV | 155 |
XVI | 167 |
XVII | 179 |
XVIII | 191 |
XXVII | 285 |
XXVIII | 295 |
XXIX | 307 |
XXX | 319 |
XXXI | 329 |
XXXII | 339 |
XXXIII | 351 |
XXXIV | 371 |
Citi izdevumi - Skatīt visu
Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on ... K. Eberl,Pierre M. Petroff,Piet Demeester Ierobežota priekšskatīšana - 2012 |
Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on ... K. Eberl,Pierre M. Petroff,Piet Demeester Priekšskatījums nav pieejams - 2012 |
Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on ... K. Eberl,Pierre M. Petroff,Piet Demeester Priekšskatījums nav pieejams - 2012 |
Bieži izmantoti vārdi un frāzes
2DEG adatoms AlGaAs Appl arrays atoms barrier buffer layer cap layer chemical chemical vapor deposition coverage Crystal Growth deposition desorption device Dimensional Structures prepared dimers E-QWI effect electron energy epitaxial growth etching excitons fabrication facets Figure flux formation GaAs GaAs quantum GaAs/AlGaAs grown growth conditions Growth or Regrowth growth rate growth temperature heteroepitaxy heterostructures InAs islands increases InGaAs interface island density kinetics laser lateral layer thickness Lett Low Dimensional Structures luminescence mask mesa metalorganic micrograph MOCVD molecular beam epitaxy monolayer MOVPE nanostructures nucleation observed optical Patterned Substrates photoluminescence Phys planar planes quantum dots quantum wire quantum wire structures reconstruction region Regrowth on Patterned RHEED Sakaki sample Schematic selective epitaxy selective growth semiconductor shown in Fig shows sidewalls silicon SiO2 spectra step edges strain stress fields substrate temperature superlattices surface diffusion techniques V/III vertical vicinal surface waveguide width
Populāri fragmenti
v. lappuse - Science as part of the activities of the NATO Science Committee. Other books previously published as a result of the activities of the Special Programme are: NASTASI, M., PARKING, DM and GLEITER, H.
Atsauces uz šo grāmatu
Nanoscale Science and Technology Nicolás García,M. Nieto-Vesperinas,Hermann Rohrer Ierobežota priekšskatīšana - 1998 |